Patents by Inventor Michael Hyatt
Michael Hyatt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9583381Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.Type: GrantFiled: June 14, 2013Date of Patent: February 28, 2017Assignee: Micron Technology, Inc.Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
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Patent number: 9465287Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: GrantFiled: October 30, 2015Date of Patent: October 11, 2016Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
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Publication number: 20160048074Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: ApplicationFiled: October 30, 2015Publication date: February 18, 2016Applicant: MICRON TECHNOLOGY, INC.Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 9235134Abstract: Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.Type: GrantFiled: August 16, 2010Date of Patent: January 12, 2016Assignee: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou, Scott Light, Dan Millward
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Patent number: 9213239Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: GrantFiled: January 22, 2013Date of Patent: December 15, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 9140977Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: GrantFiled: May 13, 2013Date of Patent: September 22, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Publication number: 20140370684Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.Type: ApplicationFiled: June 14, 2013Publication date: December 18, 2014Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
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Patent number: 8883372Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: GrantFiled: June 5, 2012Date of Patent: November 11, 2014Assignee: Nanya Technology Corp.Inventors: Scott Light, Dan Millward, Anton Devilliers, Yuan He, Michael Hyatt, Lijing Gou, Kaveri Jain, Zishu Zhang, Jianming Zhou
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Patent number: 8871407Abstract: A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.Type: GrantFiled: March 9, 2012Date of Patent: October 28, 2014Assignee: Micron Technology, Inc.Inventors: Anton Devilliers, Michael Hyatt
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Patent number: 8845908Abstract: A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.Type: GrantFiled: August 24, 2010Date of Patent: September 30, 2014Assignee: Micron Technology, Inc.Inventors: Scott L. Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton deVilliers, Michael Hyatt, Jianming Zhou
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Patent number: 8815497Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.Type: GrantFiled: July 15, 2013Date of Patent: August 26, 2014Assignee: Micron Technology, Inc.Inventors: Dan Millward, Kaveri Jain, Zishu Zhang, Lijing Gou, Anton J. deVillers, Jianming Zhou, Yuan He, Michael Hyatt, Scott L. Light
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Publication number: 20140205952Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.Type: ApplicationFiled: January 22, 2013Publication date: July 24, 2014Applicant: Micron Technology, Inc.Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt
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Patent number: 8685630Abstract: Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.Type: GrantFiled: August 9, 2013Date of Patent: April 1, 2014Assignee: Micron Technology, Inc.Inventors: Anton DeVilliers, Michael Hyatt
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Publication number: 20140054756Abstract: An anti spacer process, which comprises: (a) providing a resist layer including a non-uniform shape; (b) coating a target layer above the resist layer; (c) providing anti spacer trenches (spa) between the target layer and the resist layer; and (d) connecting at least part of the anti spacer trenches (spa) together to isolate a first part of the target layer and a second part of the target layer.Type: ApplicationFiled: August 23, 2012Publication date: February 27, 2014Inventors: MICHAEL HYATT, Richard Housley, ANTON DEVILLIERS
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Patent number: 8625078Abstract: A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map.Type: GrantFiled: April 6, 2011Date of Patent: January 7, 2014Assignee: Nanya Technology Corp.Inventors: Jianming Zhou, Scott Light, Dan Millward, Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton DeVilliers, Michael Hyatt
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Publication number: 20130323924Abstract: Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.Type: ApplicationFiled: August 9, 2013Publication date: December 5, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Anton DeVilliers, Michael Hyatt
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Publication number: 20130323628Abstract: A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.Type: ApplicationFiled: June 5, 2012Publication date: December 5, 2013Inventors: SCOTT LIGHT, DAN MILLWARD, ANTON DEVILLIERS, YUAN HE, MICHAEL HYATT, LIJING GOU, KAVERI JAIN, ZISHU ZHANG, JIANMING ZHOU
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Publication number: 20130252142Abstract: An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed.Type: ApplicationFiled: May 13, 2013Publication date: September 26, 2013Applicant: Micron Technology, Inc.Inventors: Yuan He, Kaveri Jain, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Michael Hyatt, Jianming Zhou, Scott L. Light, Dan B. Millward
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Patent number: 8512938Abstract: Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment.Type: GrantFiled: June 14, 2010Date of Patent: August 20, 2013Assignee: Micron Technology, Inc.Inventors: Anton DeVilliers, Michael Hyatt
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Patent number: 8507191Abstract: Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.Type: GrantFiled: January 7, 2011Date of Patent: August 13, 2013Assignee: Micron Technology, Inc.Inventors: Dan B. Millward, Yuan He, Lijing Gou, Zishu Zhang, Anton J. deVilliers, Jianming Zhou, Kaveri Jain, Scott Light, Michael Hyatt