Abstract: Methods and systems are provided for diffraction-based overlay (DBO) metrology of a multilayered sample. In one example, a method may include generating spatially structured light via a light source and an optical modulator, transmitting the spatially structured light onto the multilayered sample, detecting diffracted spatially structured light at one or more of a plurality of sensors, and estimating an overlay error of the multilayered sample based on the diffracted spatially structured light detected at the one or more of the plurality of sensors.

Abstract: A system may include a broadband light source emitting polarized light that is polarized to two orthogonal polarization states, multiple beam splitters for combining and splitting the polarization states, and interferometric cell for creation of interference patterns with respect to a sample surface, lenses of appropriate design that focus the polarized light at predefined locations, and sensors that analyze the polarized light as a function of angle and wavelength. The system may also include a controller configured to modulate the reference arm through operation of an optical chopper and allow for different data analysis modes to be used on the system produced data.

Abstract: A method for laser processing provides a coating material (130) applied to a rough surface (42) of a substrate (44) to mitigate adverse optical effects that would be caused by roughness of the surface (42). Laser pulses (52) of the laser output of suitable parameters can be directed and focused to internally mark the substrate (44) material without damaging the rough surface (42) after passing through the coating material (130).

Abstract: The properties of a surface of an object in presence of thin transparent films are determined by generating a library of model signals and processing a measurement signal via searching the library to evaluate films properties and topography. The library may be reduced with principal component analysis to enhance computation speed. Computation enhancement may also be achieved by removal of the height contributions from the signal leaving only the film contribution in the signal. The film measurement signal is compared to a library of film signals to determine the film parameters of the sample. The library of film signals is produced by processing each full signal in a library to similarly remove the height contributions leaving only the film contributions. Additionally, a post-analysis process may be applied to properly evaluate local topography.

Abstract: An optical metrology device determines the local stress in a film on a substrate. The metrology device maps the thickness of the substrate prior to processing. After processing, the metrology device determines the surface curvature of the substrate caused by the processing and maps the thickness of a film on the top surface after of the substrate after processing. The surface curvature of the substrate may be determined as basis functions. The local stress in the film is then determined using the mapped thickness of the substrate, the determined surface curvature, and the mapped thickness of the film. The local stress may be determined using Stoney's equation that is corrected for non-uniform substrate curvature, non-uniform film thickness, and non-uniform substrate thickness.

Abstract: The properties of a surface of an object in presence of thin transparent films are determined by generating a library of model signals and processing a measurement signal via searching the library to evaluate films properties and topography. The library may be reduced with principal component analysis to enhance computation speed. Computation enhancement may also be achieved by removal of the height contributions from the signal leaving only the film contribution in the signal. The film measurement signal is compared to a library of film signals to determine the film parameters of the sample. The library of film signals is produced by processing each full signal in a library to similarly remove the height contributions leaving only the film contributions. Additionally, a post-analysis process may be applied to properly evaluate local topography.

Abstract: An optical metrology device determines the local stress in a film on a substrate. The metrology device maps the thickness of the substrate prior to processing. After processing, the metrology device determines the surface curvature of the substrate caused by the processing and maps the thickness of a film on the top surface after of the substrate after processing. The surface curvature of the substrate may be determined as basis functions. The local stress in the film is then determined using the mapped thickness of the substrate, the determined surface curvature, and the mapped thickness of the film. The local stress may be determined using Stoney's equation that is corrected for non-uniform substrate curvature, non-uniform film thickness, and non-uniform substrate thickness.

Abstract: Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.

Abstract: Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.

Abstract: Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parameterized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.

Abstract: A method for inspecting objects such as semiconductor wafers. A staging platform and an optical platform are arranged so that the object may be staged and its surface scanned by optical equipment situated on the optical platform. During the scanning process, the surface is illuminated with light of a plurality of wavelengths, each strobed at a predetermined rate so that multiple images may be collected using time and frequency multiplexing. The multiple images are stored in a database for analysis, which includes processing selected ones of the multiple images according to one or more algorithms. The defect-detection algorithms used for each object are determined by referenced to a predetermined or calculated defect detection protocol, then a defect mask is created for each pixel in the images that is suspected to be defective. The defect mask is then compared to threshold parameters to determine which if any of the suspected defects should be reported.

Abstract: Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parametrized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.

Abstract: Disclosed is an interferometry analysis method that includes comparing information derivable from multiple interferometry signals corresponding to different surface locations of a test object to information corresponding to multiple models of the test object, wherein the multiple models are parameterized by a series of characteristics that relate to one or more under-resolved lateral features of the test object; and outputting information about the under-resolved surface feature based on the comparison.