Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.

Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.

Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.

Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

Abstract: A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED's refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

Abstract: Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region.

Abstract: LED lamps having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

Abstract: Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region.