Abstract: Serial data transmission for dynamic random access memory (DRAM) interfaces is disclosed. Instead of the parallel data transmission that gives rise to skew concerns, exemplary aspects of the present disclosure transmit the bits of a word serially over a single lane of the bus. Because the bus is a high speed bus, even though the bits come in one after another (i.e., serially), the time between arrival of the first bit and arrival of the last bit of the word is still relatively short. Likewise, because the bits arrive serially, skew between bits becomes irrelevant. The bits are aggregated within a given amount of time and loaded into the memory array.

Abstract: An output driver for driving a data output signal through an output pad includes a plurality of calibration paths to calibrate the impedance of the output pad. Depending upon the desired impedance, various ones of the calibration paths are selectively coupled to the output pad. Each selected calibration path adds a capacitive load to a data node, which affects the slew rate for the data output signal. To adjust the capacitive load on the data node in light of the calibration path selections, the output driver includes a plurality of selectable capacitors corresponding to the plurality of calibration paths. If a calibration path is not selected to couple to the output pad, the corresponding selectable capacitor capacitively loads the data node.

Abstract: Dynamic random access memory (DRAM) backchannel communication systems and methods are disclosed. In one aspect, a backchannel communication system allows a DRAM to communicate error correction information and refresh alert information to a System on a Chip (SoC), applications processor (AP), or other memory controller.

Abstract: A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect on an interconnect level extending in a length direction to connect the PMOS drains together. A second interconnect on the interconnect level extends in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level couple the first interconnect and the second interconnect together. A third interconnect on the interconnect level extends perpendicular to the length direction and is offset from the set of interconnects to connect the first interconnect and the second interconnect together.

Abstract: Systems and methods for operating transistors near or in the sub-threshold region to reduce power consumption are described herein. In one embodiment, a method for low power operation comprises sending a clock signal to a flop via a clock path comprising a plurality of transistors, wherein the clock signal has a high state corresponding to a high voltage that is above threshold voltages of the transistors in the clock path. The method also comprises sending a data signal to the flop via a data path comprising a plurality of transistors, wherein the data signal has a high state corresponding to a low voltage that is below threshold voltages of the transistors in the data path. The method further comprises latching the data signal at the flop using the clock signal.