Patents by Inventor Michael K. Doan

Michael K. Doan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device with plural reference cells, and method of setting the reference cells
    Patent number: 8780639
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: July 15, 2014
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuan T. Vu
  • Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
    Publication number: 20140104961
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Application
    Filed: May 8, 2012
    Publication date: April 17, 2014
    Applicant: Silicon Storage Technology, Inc.
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuan T. Vu
  • Non-volatile memory device with plural reference cells, and method of setting the reference cells
    Patent number: 8576630
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: November 5, 2013
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuan T. Vu
  • Non-volatile memory device with plural reference cells, and method of setting the reference cells
    Patent number: 8559228
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: October 15, 2013
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuan T. Vu
  • Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells
    Publication number: 20120257465
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Application
    Filed: May 8, 2012
    Publication date: October 11, 2012
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuan T. Vu
  • Non-Volatile Memory Device with Plural Reference Cells, and Method of Setting the Reference Cells
    Publication number: 20100254207
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Application
    Filed: March 16, 2010
    Publication date: October 7, 2010
    Applicant: SILICON STORAGE TECHNOLOGY, INC.
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuan T. Vu
  • NON-VOLATILE MEMORY DEVICE WITH PLURAL REFERENCE CELLS, AND METHOD OF SETTING THE REFERENCE CELLS
    Publication number: 20090219776
    Abstract: A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
    Type: Application
    Filed: February 29, 2008
    Publication date: September 3, 2009
    Inventors: Xian Liu, Michael James Heinz, Eugene Jinglun Tam, Michael K. Doan, Alexander Kotov, Tho Ngoc Dang, Jack Edward Frayer, Jung Hee Yun, Thuant T. Vu