Patents by Inventor Michael Krames
Michael Krames has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11879085Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: GrantFiled: September 27, 2021Date of Patent: January 23, 2024Assignee: SEABOROUGH IP I B.V.Inventors: Michael Krames, Marie Anne Van de Haar
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Publication number: 20230197695Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: ApplicationFiled: February 10, 2023Publication date: June 22, 2023Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Patent number: 11605618Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: GrantFiled: March 17, 2021Date of Patent: March 14, 2023Assignee: AVICENATECH CORP.Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Publication number: 20220403237Abstract: The invention relates to lighting emitting devices and systems comprising a luminescent composition, said luminescent composition comprising: (i) a first emitting material, said first emitting material having a host lattice doped with EU3+ ions; (ii) a second emitting material, said second emitting material having a host lattice doped with Tb3+ ions; and (iii) sensitizer material, which sensitizer material is excitable in the violet-to-blue (400 to 480 nm) wavelength range and has an emission spectrum which overlaps at least partly with one or more excitation bands of the first emitting material and with which overlaps at least partly with one or more excitation bands of the second emitting material.Type: ApplicationFiled: September 13, 2019Publication date: December 22, 2022Applicant: SEABOROUGH IP I B.V.Inventors: Michael KRAMES, Marie Anne VAN DE HAAR
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Publication number: 20220288412Abstract: A lighting arrangement for general lighting, comprising a first light source Oadapted to emit a first light substantially only in a first predetermined spectrum in a range from 615 nm to 690 nm, one or more driver circuits adapted to provide a first pulsed driving current to the first light source for producing the first light pulsing with a first peak radiant power in the first predetermined spectrum sufficient to induce a photo-biomodulation response in a human body, and a second light source adapted to emit a second light, the second light source being capable of emitting at least 250 lumens.Type: ApplicationFiled: May 23, 2022Publication date: September 15, 2022Inventors: Jürgen Eduard HONOLD, Martijn Jeroen DEKKER, Michael KRAMES, Marie Anne VAN DE HAAR, Charlie MINTER
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Publication number: 20220049159Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: ApplicationFiled: September 27, 2021Publication date: February 17, 2022Inventors: Michael KRAMES, Marie Anne Van de Haar
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Patent number: 11233181Abstract: The present invention relates to a light emitting device comprising a red-emitting Eu3+ material and green emitting Ce3+ material which are matched so that the resulting white light has an increased lumen equivalent of radiation for a given color rendering index than with the prior art.Type: GrantFiled: October 20, 2017Date of Patent: January 25, 2022Assignee: SEABOROUGH IP I B.V.Inventors: Michael Krames, Marie Anne Van De Haar
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Patent number: 11162026Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: GrantFiled: March 16, 2018Date of Patent: November 2, 2021Assignee: Seaborough IP I B.V.Inventors: Michael Krames, Marie Anne Van de Haar
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Publication number: 20210296292Abstract: An LED array on a sapphire substrate may be mounted on a silicon interconnect chip, with LEDs of the array inserted into holes of waveguides on the silicon interconnect chip. The sapphire substrate and the silicon interconnect chip may both have microbumps for carrying electrical signals to or from the LEDs, and the sapphire substrate and silicon interconnect chip may be bonded together using the microbumps. The LEDs may be configured to preferentially emit light in a lateral direction, for increased coupling of light into the waveguides.Type: ApplicationFiled: March 17, 2021Publication date: September 23, 2021Inventors: Michael Krames, Bardia Pezeshki, Robert Kalman, Cameron Danesh
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Publication number: 20210288228Abstract: The present invention relates to a light emitting device comprising a red-emitting Eu3+ material and green emitting Ce3+ material which are matched so that the resulting white light has an increased lumen equivalent of radiation for a given color rendering index than with the prior art.Type: ApplicationFiled: October 20, 2017Publication date: September 16, 2021Applicant: SEABOROUGH IP I B.V.Inventors: Michael KRAMES, Marie Anne VAN DE HAAR
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Publication number: 20200063031Abstract: The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.Type: ApplicationFiled: March 16, 2018Publication date: February 27, 2020Inventors: Michael Krames, Marie Anne Van de Haar
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Patent number: 9589792Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: GrantFiled: November 25, 2013Date of Patent: March 7, 2017Assignee: Soraa, Inc.Inventors: Wenkan Jiang, Mark P. D'Evelyn, Derrick S. Kamber, Dirk Ehrentraut, Michael Krames
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Patent number: 8905588Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.Type: GrantFiled: April 18, 2014Date of Patent: December 9, 2014Assignee: Sorra, Inc.Inventors: Michael Krames, Troy Trottier, Frank Steranka, William Houck, Arpan Chakraborty
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Publication number: 20140225137Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.Type: ApplicationFiled: April 18, 2014Publication date: August 14, 2014Applicant: Soraa, Inc.Inventors: Michael Krames, Troy Trottier, Frank Steranka, William Houck, Arpan Chakraborty
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Patent number: 8740413Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.Type: GrantFiled: December 16, 2011Date of Patent: June 3, 2014Assignee: Soraa, Inc.Inventors: Michael Krames, Troy Trottier, Frank Steranka, William Houck, Arpan Chakraborty
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Publication number: 20140147650Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.Type: ApplicationFiled: November 25, 2013Publication date: May 29, 2014Applicant: SORAA, INC.Inventors: WENKAN JIANG, MARK P. D'EVELYN, DERRICK S. KAMBER, DIRK EHRENTRAUT, MICHAEL KRAMES
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Patent number: 8471280Abstract: In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.Type: GrantFiled: November 6, 2009Date of Patent: June 25, 2013Assignee: Koninklijke Philips Electronics N.V.Inventors: Rafael I. Aldaz, Grigoriy Basin, Paul S. Martin, Michael Krames
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Publication number: 20110108865Abstract: In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.Type: ApplicationFiled: November 6, 2009Publication date: May 12, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Rafael I. ALDAZ, Grigoriy BASIN, Paul S. MARTIN, Michael KRAMES
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Publication number: 20080070334Abstract: A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.Type: ApplicationFiled: October 8, 2007Publication date: March 20, 2008Applicants: PHILIPS LUMILEDS LIGHTING COMPANY, LLC, AVAGO TECHNOLOGIES GENERAL IP PTE. LTD.Inventors: Michael Krames, Mihail Sigalas, Jonathan Wierer
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Publication number: 20080023719Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.Type: ApplicationFiled: October 8, 2007Publication date: January 31, 2008Applicant: PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Michael Camras, Michael Krames, Wayne Snyder, Frank Steranka, Robert Taber, John Uebbing, Douglas Pocius, Troy Trottier, Christopher Lowery, Gerd Mueller, Regina Mueller-Mach, Gloria Hofler