Abstract: A high value resistor of the present invention has an active layer deposited over a semi-insulating substrate. Channel etch regions are defined within the active layer. Gate metal is deposited over each channel etch region. Ohmic contact material is deposited at opposing ends of the active layer to define connection regions. A second metal is deposited over the connection regions to form input/output pads. This resistor pattern presents significant increase in resistance in a given area without any additional processing or process steps.

Abstract: A cellular handset supports simultaneous service for different frequency ranges, and different wireless standards.

Abstract: A filter and impedance matching network uses acoustic resonators in place of capacitors. A resonator, e.g. FBAR, behaves similar to a capacitor outside of its resonant frequency and so does not impact the function of the network, outside of its resonant frequency. At this resonant frequency, the resonator quickly transitions from capacitor to short circuit to open circuit and back to capacitor. Thus, the will deliver open and short circuits independent of the standard LC filter resulting in a structure with an additional notch, a notch with the characteristics delivered by a very high quality resonator. This notch can be much sharper and closer to the pass band than is possible with ordinary inductors and capacitors.

Abstract: A utility vest enabling attachment of an at least one tool pouch having a generic tool belt type attachment means and method for employing same is disclosed. The utility vest comprises a vest portion having a back and two front side portions defining two armholes, a neck opening and a reinforced bottom edge along which are spaced a plurality of apertures and, one or more adapter portions comprising a rectangular staking plate on which are mounted two or more attachment means for securing the adapter portions to the reinforced bottom edge of the vest portion by inserting the attachment means into the apertures at a location selected by a user. The staking plate is sized in width to enable a tool pouch having a generic tool belt type attachment means to be fitted thereon prior to attachment of the adapter portion to the vest portion. Tool belt type tool pouches may be thereby attached to the vest at locations to distribute their weight properly so as to minimize strain to the user.

Abstract: A utility vest enabling attachment of an at least one tool pouch having a generic tool belt type attachment means and method for employing same is disclosed. The utility vest comprises a vest portion having a back and two front side portions defining two armholes, a neck opening and a reinforced bottom edge along which are spaced a plurality of apertures and, one or more adapter portions comprising a rectangular staking plate on which are mounted two or more attachment means for securing the adapter portions to the reinforced bottom edge of the vest portion by inserting the attachment means into the apertures at a location selected by a user. The staking plate is sized in width to enable a tool pouch having a generic tool belt type attachment means to be fitted thereon prior to attachment of the adapter portion to the vest portion. Tool belt type tool pouches may be thereby attached to the vest at locations to distribute their weight properly so as to minimize strain to the user.

Abstract: A cellphone handset may be excited in a completely differential mode. The antenna, e.g. a simple dipole or a minimal Yagi-Uda with a reflector, may be printed into the printed circuit board. A differential duplexer may be implemented using FBAR technology. The LNA (Low Noise Amplifier) and the PA (Power Amplifier) can both be differential.

Abstract: In one embodiment, an N-stage ladder circuit is serially connected to a bridge (lattice circuit. The N-stage ladder circuit receives differential inputs, e.g. mixers, while the bridge lattice circuit outputs a singled end output, e.g. amplifier. In another embodiment, a bridge lattice circuit is serially connected to an N-stage ladder circuit. The bridge lattice circuit receives a single ended load while the N-stage ladder circuit provides a differential output. Film bulk acoustic resonators are used in the combination ladder and lattice structure for both embodiments to provide the necessary band-pass functionality as well as make the necessary transition from differential to single ended load.

Abstract: A component that includes a first structure that is integrated with a second structure. The first structure is a lumped balanced to unbalanced circuit (balun) and the second structure is a resonator-based filter. The function of the balun is to move a signal from a differential form to a single ended form or from a single ended form to a differential form. The component has an area that is comparable to the area needed to implement the balun alone. However, the component now provides a filter function. Preferably, the substrate of the first structure also acts as a substrate for the second structure.

Abstract: Receive band filtering between the last two stages of an N-stage power amplifier can reduce the Rx band noise. There are N−1 interstage matching networks interposing N stage amplifiers, where N≧2. The interstage matching networks and stage amplifiers are electrically connected in series. The N−1th interstage matching network includes a receive band reject filter positioned proximate to the output of the N−1th stage power amplifier.

Abstract: The present invention provides gate bias to an enhancement mode field effect transistor.

Abstract: A semiconductor chip header includes an electrically insulative base member having a centrally located aperture and electrically separate metalizations. Where the semiconductor chip is a transistor, two metalizations originate on the top surface of the base member on opposing sides of the aperture, wrap around the outer edges and terminate on the bottom surface of the base member. These metalizations' termination areas are for connecting two ribbon leads (e.g. via eutectic bonding) during final assembly and packaging of a transistor. A third metalization is deposited upon a portion of the bottom surface of the base member, and surrounds the aperture. The third metalization is for connecting a third ribbon lead covering the aperture during final assembly. The aperture allows a transistor chip to be positioned therein during final assembly with its bottom chip surface (e.g. substrate) bonded directly to the third ribbon lead.

Abstract: A circuit for biasing a field effect transistor using a current source to provide a constant current which can be shared between amplifier stages by connecting it to the drain of a first stage and the source of a second stage.