Abstract: The invention relates to a device for the prevention of arcing in vacuum sputtering installations. This device comprises a pulse generator which brings the cathode of the sputtering installation at predetermined intervals to a positive potential, whereby a deposing of layers on a target takes place. This deposing prevents the building-up of high voltages which can lead to arcing.

Abstract: In a process for coating substrates by means of cathode sputtering, a magnetron cathode is used which has an annularly closed target 9. The sputter surface 9a of this target has an inner edge 9c and an outer edge 9d. The corresponding system of permanent magnets 7 has a first pole 7c which is disposed inside the inner edge and a second pole 7d disposed outside the outer edge. The characteristics of the poles geometrically resemble those of the target edges. This results in the generation of a circumferentially closed magnetic tunnel over the sputter surface. The flux lines thereof which are important to the enclosure of the plasma, are only slightly curved. In order to achieve a good material efficiency at high sputter rates and yet a high plasma density at the substrates, the spatial course of the magnetic flux lines is selectively distorted in such a way that the area of maximum target erosion, in absence of additional magnetic fields, is shifted to the vicinity of the outer edge 9d of the target 9.

Abstract: In a process for coating substrates by means of cathode sputtering, a magnetron cathode is used which has an annularly closed target 9. The sputter surface 9a of this target has an inner edge 9c and an outer edge 9d. The corresponding permanent magnets 7 has a first pole 7c which is disposed inside the inner edge and a second pole 7d disposed outside the outer edge. The characteristics of the poles geometrically resemble those of the target edges. This results in the generation of a circumferentially closed magnetic tunnel over the sputter surface. The flux lines thereof which are important to the enclosure of the plasma, are only slightly curved. In order to achieve a good material efficiency at high sputter rates and yet a high plasma density at the substrates, the spatial course of the magnetic flux lines is selectively distorted in such a way that the area of maximum target erosion, in absence of additional magnetic fields, is shifted to the vicinity of the outer edge 9d of the target 9.