Abstract: A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.

Abstract: Intensity values of electromagnetic radiation from an object to be imaged are received from an array of detectors. The array of detectors includes one or more pairs of detectors arranged as antisymmetric pairs of detectors. A Fourier transform of an image of the object is determined by correlating fluctuations of the intensity values for each antisymmetric pair of detectors. An inverse of the Fourier transform is determined, and an image of the object is generated from the inverse Fourier transform. The Fourier transform of the mean intensity pattern across the array of detectors may also be used to determine when the array is properly oriented to separate the image and mirror image.

Abstract: Intensity values of electromagnetic radiation from an object to be imaged are received from an array of detectors. The array of detectors includes one or more pairs of detectors arranged as antisymmetric pairs of detectors. A Fourier transform of an image of the object is determined by correlating fluctuations of the intensity values for each antisymmetric pair of detectors. An inverse of the Fourier transform is determined, and an image of the object is generated from the inverse Fourier transform. The Fourier transform of the mean intensity pattern across the array of detectors may also be used to determine when the array is properly oriented to separate the image and mirror image.

Abstract: A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.

Abstract: A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.

Abstract: A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.

Abstract: A system and a method for coupling multiple pump light beams to an active fiber. The system including an inverted conical disk, concave lens or glass wedge, an active fiber placed in a center of the inverted conical disk (or concave lens) or at a bottom facet of the glass wedge and a plurality of pump light sources. The system further includes a plurality of lenses for focusing pump light beams from pump light sources towards a side of the inverted conical disk, concave lens or glass wedge, wherein the inverted conical disk, concave lens or glass wedge, couples the pump light beams into the active fiber. A method for coupling multiple pump light beams to an active fiber. The method includes providing an inverted conical disk, concave lens or glass wedge. The method further includes providing an active fiber in approximately the center of the inverted conical disk (or concave lens) or at a bottom facet of the glass wedge.

Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Abstract: A system and a method for coupling multiple pump light beams to an active fiber. The system including an inverted conical disk, concave lens or glass wedge, an active fiber placed in a center of the inverted conical disk (or concave lens) or at a bottom facet of the glass wedge and a plurality of pump light sources. The system further includes a plurality of lenses for focusing pump light beams from pump light sources towards a side of the inverted conical disk, concave lens or glass wedge, wherein the inverted conical disk, concave lens or glass wedge, couples the pump light beams into the active fiber. A method for coupling multiple pump light beams to an active fiber. The method includes providing an inverted conical disk, concave lens or glass wedge. The method further includes providing an active fiber in approximately the center of the inverted conical disk (or concave lens) or at a bottom facet of the glass wedge.

Abstract: An apparatus and method for high power amplification in a multimode fiber amplifier. The apparatus includes a diffraction limited low power laser, a multimode fiber amplifier, and a lens. The multimode fiber amplifier is coupled to the low power laser to amplify the low power laser output. The multimode fiber amplifier has a length that is set to a phase-matching length at which the transverse modes of the multimode fiber amplifier are in phase. The lens is coupled to the multimode fiber amplifier and outputs a kilowatt (KW)-level, diffraction-limited output beam from the multimode fiber amplifier.

Abstract: A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.

Abstract: An arrangement for generating a high power optical radar beam. The arrangement includes first and second laser sources each having a first laser for generating an optical beam of a relatively low frequency F1 and a second laser for generating an optical beam of relatively higher frequency F2. Each laser source provides a first optical beam of frequency F2 and a second optical beam of frequency F1+F2. The arrangement also includes first and second waveform generators each having a modulator and a mixer. A first waveform generator receives the optical beams from the first laser source and a modulation signal for modulating the F1+F2 optical beam. The first waveform generator is operative to provide an output optical beam of frequency F1 having all of the modulation applied to the optical beam of frequency F1+F2.

Abstract: An apparatus performs adaptive analog-to-digital conversion. The apparatus according to one embodiment comprises a frequency modulator unit for changing an input analog signal into a modulated analog signal with a frequency spectrum in a bandwidth of interest, a parallel delta sigma conversion unit operatively connected to the frequency modulator unit, the parallel delta sigma conversion unit converting the modulated analog signal into a digital signal, and a controller operatively connected to the frequency modulator unit and the parallel delta sigma conversion unit, the controller adjusting at least one parameter relating to a frequency characteristic of the frequency modulator unit and/or the parallel delta sigma conversion unit.

Abstract: A monolithically integrated circuit is described for multiplexing parallel electrical data into a serial bit stream for transmission by fiber optics to a remote utilization apparatus and for demultiplexing a serial bit stream received from a fiber optics transmission path from a remote source. The integrated circuit uses a separate fiber for transmission and for reception, and in the transmission mode, encodes the data, which is clocked by on chip clocking into a self-clocking three-level code. The integrated circuit utilizes GaAs as the substrate material and is capable of transmitting data at bit rates in excess of 1/2 gHz.

Abstract: Signal processing apparatus having the capability to perform simultaneous space-time processing of sonar, radar and similar time-varying signals, and to effect the Fourier transform of multiple time-varying signals through electro-optical photoelastic means, photoconductive means, or photoemissive means.