Patents by Inventor Michael M. Iwatake

Michael M. Iwatake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Via contact structure having dual silicide layers
    Patent number: 8288828
    Abstract: A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.
    Type: Grant
    Filed: September 9, 2004
    Date of Patent: October 16, 2012
    Assignee: International Business Machines Corporation
    Inventors: Michael M. Iwatake, Kevin E. Mello, Matthew W. Oonk, Amanda L. Piper, Yun Y. Wang, Keith K. Wong
  • Low Cu percentages for reducing shorts in AlCu lines
    Patent number: 6960306
    Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising: a) depositing on a first underlayer, a blanket of an aluminum compound containing an electrical short reducing amount of an alloy metal in electrical contact with the underlayer; b) depositing a photoresist and exposing and developing to leave patterns of photoresist on the blanket aluminum compound containing an electrical short reducing amount of an alloy metal; and c) reactive ion etching to obtain an aluminum compound containing an alloy metal line characterized by reduced shorts in amounts less than the aluminum compound without said short reducing amount of alloy metal.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: November 1, 2005
    Assignees: Infineon Technologies AG, International Business Machines Corporation
    Inventors: Roy C. Iggulden, Padraic Shafer, Kwong Hon (Keith) Wong, Michael M. Iwatake, Jay W. Strane, Thomas Goebel, Donna D. Miura, Chet Dziobkowski, Werner Robl, Brian Hughes
  • Method to enhance epitaxial regrowth in amorphous silicon contacts
    Patent number: 6740568
    Abstract: In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: May 25, 2004
    Assignees: Infineon Technologies AG, International Business Machines Corporation
    Inventors: Yun Yu Wang, Johnathan Faltermeier, Colleen M. Snavely, Michael Maldei, Michael M. Iwatake, David M. Dobuzinsky, Ravikumar Ramachandran, Viraj Y. Sardesai, Philip L. Flaitz, Lisa Y. Ninomiya
  • Low Cu percentages for reducing shorts in AlCu lines
    Publication number: 20040020891
    Abstract: In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising:
    Type: Application
    Filed: July 31, 2002
    Publication date: February 5, 2004
    Applicants: Infineon Technologies North America Corp., International Business Machines Corporation or ITR, LP; IT AG; UMC, etc.
    Inventors: Roy C. Iggulden, Padraic Shafer, Kwong Hon Wong, Michael M. Iwatake, Jay W. Strane, Thomas Goebel, Donna D. Miura, Chet Dziobkowski, Wemer Robl, Brian Hughes
  • Method to enhance epi-regrowth in amorphous poly CB contacts
    Publication number: 20040018680
    Abstract: In a method of preparing a DRAM wherein doped poly-Si is used as a CB contact as well as a source of doping in the contact region, and where
    Type: Application
    Filed: July 29, 2002
    Publication date: January 29, 2004
    Inventors: Yun Yu Wang, Johnathan Faltermeier, Colleen M. Snavely, Michael Maldei, Michael M. Iwatake, David M. Dobuzinsky, Ravikumar Ramachandran, Viraj Y. Sardesai, Philip L. Flaitz, Lisa Y. Ninomiya