Abstract: The present invention provides for improved interbody cage devices using surgical methods for delivering such cage into the disc space. The present invention has at least one advantage of providing practical and advantageous methods for accessing the spinal disc space to insert and deploy interbody cage devices in various manners that overcome the disadvantages of posterior, trans-sacro-iliac, anterior, oblique and lateral approaches thereto and minimize surgical trauma to the patient. Thus, the present invention provides for the unmet need for improved interbody cage devices which may be inserted to a disc space for patients exhibiting a wide range of anatomies.

Abstract: A spinal interbody fusion device for use in a plurality of surgical approaches includes a cage, a top end, a bottom end, and at least a first side representing the width of the cage and at least a second side representing a length of the cage. The cage includes fixation holes and inserter holes, with each fixation hole being configured for accepting a screw or anchor and each inserter hole being accessible for one or more surgical approaches for performing a spinal fusion. Also included are methods for selecting a size of an intervertebral implant and methods of surgically approaching a spine of a patient for spinal surgical procedures.

Abstract: A spinal interbody fusion device for use in a plurality of surgical approaches includes a cage, a top end, a bottom end, and at least a first side representing the width of the cage and at least a second side representing a length of the cage. The cage includes fixation holes and inserter holes, with each fixation hole being configured for accepting a screw or anchor and each inserter hole being accessible for one or more surgical approaches for performing a spinal fusion. Also included are methods for selecting a size of an intervertebral implant and methods of surgically approaching a spine of a patient for spinal surgical procedures.

Abstract: A spinal interbody fusion device for use in a plurality of surgical approaches includes a cage, a top end, a bottom end, and at least a first side representing the width of the cage and at least a second side representing a length of the cage. The cage includes fixation holes and inserter holes, with each fixation hole being configured for accepting a screw or anchor and each inserter hole being accessible for one or more surgical approaches for performing a spinal fusion. Also included are methods for selecting a size of an intervertebral implant and methods of surgically approaching a spine of a patient for spinal surgical procedures.

Abstract: A spinal interbody fusion device for use in a plurality of surgical approaches includes a cage, a top end, a bottom end, and at least a first side representing the width of the cage and at least a second side representing a length of the cage. The cage includes fixation holes and inserter holes, with each fixation hole being configured for accepting a screw or anchor and each inserter hole being accessible for one or more surgical approaches for performing a spinal fusion. Also included are methods for selecting a size of an intervertebral implant and methods of surgically approaching a spine of a patient for spinal surgical procedures.

Abstract: The present invention provides for improved surgical methods for securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies. The present invention has at least one advantage of providing practical and advantageous methods for accessing the spinal vertebrae to insert spinal implants in various manners that overcome the disadvantages of posterior, trans-sacro-iliac and anterior lateral approaches thereto and minimize surgical trauma to the patient. Thus the present invention provides for the unmet need for an improved method for performing spinal surgical procedures (e.g., spinal fusion and/or fixations) that can securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies.

Abstract: The present invention provides for improved surgical methods for securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies. The present invention has at least one advantage of providing practical and advantageous methods for accessing the spinal vertebrae to insert spinal implants in various manners that overcome the disadvantages of posterior, trans-sacro-iliac and anterior lateral approaches thereto and minimize surgical trauma to the patient. Thus the present invention provides for the unmet need for an improved method for performing spinal surgical procedures (e.g., spinal fusion and/or fixations) that can securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies.

Abstract: The present invention provides for an improved implant, and surgical methods for installing same, that can securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies. The present invention has at least one advantage of providing practical and advantageous spinal implants and implantation systems, methods and tools for accessing the spinal vertebrae to insert spinal implants in various manners that overcome the disadvantages of posterior and anterior lateral approaches thereto and minimize surgical trauma to the patient. Thus the present invention provides for the unmet need for an improved implant for performing spinal surgical procedures (e.g., spinal fusion and/or fixations) that can securely fix the L5 vertebrae to the S1 sacrum within the disc space for patients exhibiting a wide range of anatomies.

Abstract: Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.

Abstract: Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.

Abstract: Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.

Abstract: Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer, in which the thermally growing the oxide layer results in at least partially consuming the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer.

Abstract: Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer, in which the thermally growing the oxide layer results in at least partially consuming the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer.

Abstract: Instrumentation for retracting tissue comprising a retractor member including a sidewall defining an axial passage extending along a length thereof and a lateral opening in transverse communication with the passage. A pin member is disposed within the passage and includes a distal end portion positionable adjacent the distal end of the retractor member, with at least a portion of the pin member positioned adjacent and visible through the lateral opening. In another embodiment, the retractor member includes a sidewall having a main sidewall portion defining a first wall thickness, and an enlarged sidewall portion extending axially along a length of the sidewall and defining a second wall thickness greater than the first wall thickness, with the sidewall defining an axial passage extending through the enlarged sidewall portion. A pin member is disposed within the passage and includes a distal end portion positionable adjacent the distal end of the retractor member.

Abstract: Methods, systems, and devices are disclosed for thermal processing of silicon carbide semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen and phosphorous co-doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen and phosphorous co-doped SiC epitaxial layer, in which the thermally growing the oxide layer results in at least partially consuming the nitrogen and phosphorous co-doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen and phosphorous between the SiC epitaxial layer and the oxide layer.

Abstract: Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide semiconductor device includes forming a thin epitaxial layer of a nitrogen doped SiC material on a SiC epitaxial layer formed on a SiC substrate, and thermally growing an oxide layer to form an insulator material on the nitrogen doped SiC epitaxial layer, in which the thermally grown oxide layer results in at least partially consuming the nitrogen doped SiC epitaxial layer in the oxide layer to produce an interface including nitrogen between the SiC epitaxial layer and the oxide layer.

Abstract: An intervertebral joint with one embodiment comprising a socket screw, a ball screw, and two support screws. The socket screw and ball screw form a socket joint between two vertebral members. A first support screw braces the socket screw. A second support screw braces the ball screw.

Abstract: Instrumentation for retracting tissue comprising a retractor member including a sidewall defining an axial passage extending along a length thereof and a lateral opening in transverse communication with the passage. A pin member is disposed within the passage and includes a distal end portion positionable adjacent the distal end of the retractor member, with at least a portion of the pin member positioned adjacent and visible through the lateral opening. In another embodiment, the retractor member includes a sidewall having a main sidewall portion defining a first wall thickness, and an enlarged sidewall portion extending axially along a length of the sidewall and defining a second wall thickness greater than the first wall thickness, with the sidewall defining an axial passage extending through the enlarged sidewall portion. A pin member is disposed within the passage and includes a distal end portion positionable adjacent the distal end of the retractor member.

Abstract: Various embodiments of the present invention provide, for example, a system and method for centering a surgical tool about the spinous process or other bony structure. Certain embodiments of the present invention may guide the surgical tool along a posterior midline of the spine in order to divide the spinous process. Various embodiments of the present invention may also further provide a system and method for performing a minimally invasive laminectomy procedure via the midline approach described above that may thus reduce the trauma experienced by tissues surrounding the spine or other bony structure.

Abstract: An improved valve assembly (100) includes a primary spring (142) which extends along a valve stem (144). A spring retainer (150) holds the primary spring (142) on the valve stem (144) and has a thread convolution (152) which engages a thread convolution (154) on the valve stem (144). The spring retainer (150) has a force transmitting surface (182) which engages a reference surface (184) on the valve stem (144) with a retainer preload force which is at least as great as a primary spring preload force. Shims (158–162) are provided between the primary spring (142) and the spring retainer (150) to enable a desired primary spring preload force to be obtained.