Patents by Inventor Michael Mankel

Michael Mankel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated-gate bipolar transistor collector-emitter saturation voltage measurement
    Patent number: 9575113
    Abstract: In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: February 21, 2017
    Assignee: Infineon Technologies AG
    Inventors: Michael Mankel, Carlos Castro-Serrato
  • Power inverter including SiC JFETs
    Patent number: 9143078
    Abstract: A power inverter includes a reference line operably provided with a reference potential and a supply line operably provided with a DC supply voltage with respect to the reference potential. A first half bridge includes a high-side switch and a low-side switch. The high-side switch is coupled between the supply line and a middle tap of the half bridge and the low-side switch is coupled between the middle tap and the reference line. The low-side switch is formed by a normally-on silicon carbide junction field effect transistor and the high-side switch is formed by a series circuit of a normally-on silicon carbide junction field effect transistor and a normally-off metal oxide field effect transistor.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: September 22, 2015
    Assignee: Infineon Technologies AG
    Inventors: Carlos Castro, Michael Mankel, Mark N. Muenzer
  • INSULATED-GATE BIPOLAR TRANSISTOR COLLECTOR-EMITTER SATURATION VOLTAGE MEASUREMENT
    Publication number: 20150226787
    Abstract: In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (VCESat) of the IGBT.
    Type: Application
    Filed: February 7, 2014
    Publication date: August 13, 2015
    Applicant: Infineon Technologies AG
    Inventors: Michael Mankel, Carlos Castro-Serrato
  • Power Inverter Including SiC JFETs
    Publication number: 20140145664
    Abstract: A power inverter includes a reference line operably provided with a reference potential and a supply line operably provided with a DC supply voltage with respect to the reference potential. A first half bridge includes a high-side switch and a low-side switch. The high-side switch is coupled between the supply line and a middle tap of the half bridge and the low-side switch is coupled between the middle tap and the reference line. The low-side switch is formed by a normally-on silicon carbide junction field effect transistor and the high-side switch is formed by a series circuit of a normally-on silicon carbide junction field effect transistor and a normally-off metal oxide field effect transistor.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Carlos Castro, Michael Mankel, Mark N. Muenzer