Abstract: In a latching device for a head restraint, a locking element is movably mounted in a carrier device. The locking element can be moved from a locked position into an unlocked position by actuation of an actuating device. The latching device is movably mounted with respect to a retaining rod. In the unlocked position, the locking element allows the latching device to be moved with respect to the retaining rod, while in the locked position the locking element engages in at least one cut-out of the retaining rod for latching the latching device with respect to the retaining rod. According to the invention, in the locked position the carrier device, together with the locking element arranged therein, is mirror-symmetrical to an xz plane extending substantially perpendicularly to the carrier device.

Abstract: In a latching device for a head restraint, a locking element is movably mounted in a carrier device. The locking element can be moved from a locked position into an unlocked position by actuation of an actuating device. The latching device is movably mounted with respect to a retaining rod. In the unlocked position, the locking element allows the latching device to be moved with respect to the retaining rod, while in the locked position the locking element engages in at least one cut-out of the retaining rod for latching the latching device with respect to the retaining rod.

Abstract: A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate.

Abstract: A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C60) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate.

Abstract: Passivation of a mercury cadmium telluride surface is done by using square ave direct current, with the positive portion of the wave larger than the negative part.