Abstract: An insulated gate field effect transistor is disclosed. The transistor includes a semi-insulating silicon carbide substrate, an epitaxial layer of silicon carbide layer adjacent the semi-insulating substrate for providing a drift region having a first conductivity type, and source and drain regions in the epitaxial layer having the same conductivity type as the drift region. A channel region is in the epitaxial layer, has portions between the source and the drain regions, and has the opposite conductivity type from the source and drain regions. The transistor includes contacts to the epitaxial layer for the source, drain and channel regions, an insulating layer over the channel region of the epitaxial layer, and a gate contact adjacent the insulating layer and the channel region.

Abstract: A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a mesa defined between adjacent ones of the trenches, and a Schottky contact having a relatively high barrier height at the bottom of each trench. The same metal used for the Schottky contact in each trench is deposited over the Schottky contact on the mesa. A simplified fabrication process is disclosed in which the high barrier height metal is deposited over the low barrier height metal and then used as an etch mask for reactive ion etching of the trenches to produce a self-aligned low barrier contact.

Abstract: A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As.

Abstract: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As.

Abstract: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As.

Abstract: A vertically integrated DRAM cell having a storage time of at least 4.5 hours at room temperature, formed from a wide-bandgap semiconductor such as GaAs or AlGaAs, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, with the middle p-n layers being common to both. Similarly, a p-n-p transistor can be merged with an n-p-n storage capacitor.

Abstract: Formation of a plasma etch mask on a film on a substrate by photodecomposition of a gas at selective portions of the film's surface to deposit etch mask material and form the etch mask is disclosed. The photodecomposition by blanket illumination through a photomask and by direct write with a computer controlled laser are both disclosed. The formation of the etch mask can be immediately followed by the plasma etch without breaking vacuum.

Abstract: A separate comb transducer is disclosed in a ZnO/Si SAW device to enable doubling of the possible operating frequency for a given photolithographic capability of the device. Frequency doubling is made possible by a single-phase structure having conductive and non-conductive surfaces equal to one-half of the SAW wavelength. By connection of two such structures in parallel, a balanced separate comb transducer is achieved for reducing signal levels due to direct coupling that otherwise occurs in the single-phase structure. Separate comb grating transducers are also disclosed to enable fabrication of higher frequency MZOS convolvers, with both the separate comb transducer and separate comb grating transducer being shown utilized in both the Rayleigh and Sezawa modes.