Patents by Inventor Michael R. Splinter

Michael R. Splinter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low temperature microwave annealing of semiconductor devices
    Patent number: 4303455
    Abstract: Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.
    Type: Grant
    Filed: March 14, 1980
    Date of Patent: December 1, 1981
    Assignee: Rockwell International Corporation
    Inventors: Michael R. Splinter, Richard F. Palys, Moiz M. Beguwala
  • Submicron semiconductor devices
    Patent number: 4268951
    Abstract: Semiconductor devices with gate dimensions as small as 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) have been produced. The devices and the process are especially adapted to bulk silicon based transistors.
    Type: Grant
    Filed: November 13, 1978
    Date of Patent: May 26, 1981
    Assignee: Rockwell International Corporation
    Inventors: Michael T. Elliott, Michael R. Splinter, Addison B. Jones, John P. Reekstin