Abstract: A method and apparatus for packaging a MEMS device is disclosed that includes a MEMS die mounting surface, a MEMS device disposed on the mounting surface, and a fluid contained within the package and surrounding at least a portion of the MEMS device. The fluid may be selected to provide certain advantageous features. For example, the fluid may have a selected index of refraction that is matched with a lens index of refraction of the lens, have a viscosity selected to provide a predetermined mechanical damping to the MEMS device, be thermally coupled with the MEMS device and configured to remove heat from the MEMS device. The fluid may also be configured in mechanical cooperation with a spring mounted scanning element, a linear translation actuator, a rotational actuator, a lens, etc. to actuate or apply fluidic pressure to such elements.

Abstract: A mattress cover and bed bug barrier combination formed of a fabric mattress cover having walls that define an enclosure with an elongated opening extending in at least one of said walls, a zipper attached to said cover for closing said elongated opening, said zipper having a proximal end portion, a distal end portion with a distal end, and a zipper pull movable to said distal portion for closing said zipper. A buckle closure is provided and has a first part that is attached to the mattress cover, and a second part that is attached to the zipper pull, whereby said first part and said second part are securely engaged by a user when said zipper is closed, for providing an additional locking feature to ensure that the zipper remains closed when said zipper is in its closed state.

Abstract: A method and apparatus for packaging a MEMS device is disclosed that includes a MEMS die mounting surface, a MEMS device disposed on the mounting surface, and a fluid contained within the package and surrounding at least a portion of the MEMS device. The fluid may be selected to provide certain advantageous features. For example, the fluid may have a selected index of refraction that is matched with a lens index of refraction of the lens, have a viscosity selected to provide a predetermined mechanical damping to the MEMS device, be thermally coupled with the MEMS device and configured to remove heat from the MEMS device. The fluid may also be configured in mechanical cooperation with a spring mounted scanning element, a linear translation actuator, a rotational actuator, a lens, etc. to actuate or apply fluidic pressure to such elements.

Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.

Abstract: A mattress cover and bed bug barrier combination formed of a fabric mattress cover having walls that define an enclosure with an elongated opening extending in at least one of the walls, a zipper attached to the cover for closing the elongated opening, the cover having seal regions laterally adjacent the distal portion of the zipper, a seal element secured to each of the seal regions, an external barrier flap having a first part fixed to the cover, and a second part foldable from an open position where it is spaced apart from the seal elements to a closed position where it is folded down to overlie and seal against the seal elements, and thereby provide a barrier to travel of bed bugs inwardly or outwardly of the cover through the distal portion of the zipper when the zipper in its closed state.

Abstract: A mattress cover and bed bug barrier combination formed of a fabric mattress cover having walls that define an enclosure with an elongated opening extending in at least one of the walls, a zipper attached to the cover for closing the elongated opening, the cover having seal regions laterally adjacent the distal portion of the zipper, a seal element secured to each of the seal regions, an external barrier flap having a first part fixed to the cover, and a second part foldable from an open position where it is spaced apart from the seal elements to a closed position where it is folded down to overlie and seal against the seal elements, and thereby provide a barrier to travel of bed bugs inwardly or outwardly of the cover through the distal portion of the zipper when the zipper in its closed state.

Abstract: We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 ?m in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 ?m, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85° to about 92° and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.

Abstract: A micro-electromechanical system (MEMS) probe package is provided including a first reflective element receiving a light beam directed into to the probe package and a second reflective element receiving light directed from the first reflective element. The second reflective element directs light in an optical path extending from the probe package. At least one of the reflective elements includes a MEMS mirror. An embodiment of the package is made with a monolithic housing having mounting surfaces formed therein for aligning the first reflective element with the second reflective element. The monolithic housing also includes a mounting surface for aligning at least one lens with at least one of the reflective elements.

Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.

Abstract: We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 ?m in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 ?m, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85° to about 92° and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.

Abstract: We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 ?m in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 ?m, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85° to about 92° and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.

Abstract: A substrate carrier for carrying one or more substrates comprises a bottom surface, a top surface opposed to the bottom surface, one or more recesses formed into the top surface, each of the one or more recesses having a support surface that defines a support region for a substrate. The support region is adapted to contact a bottom of the substrate. The support region may have a thickness less than a depth of the one or more recesses. The support region may comprise a porous material to permit thermal fluid to percolate through the support region.

Abstract: Disclosed herein is a method of etching deep trenches in a substrate which utilizes the overlying mask structure to achieve a trench having a positive tapered sidewall angle of less than about 88°. The method employs the successive etching of a lateral undercut in the substrate beneath a masking material, while at the same time etching vertically downward beneath the mask. The coordinated widening of the lateral undercut at the top of the trench, while vertically extending the depth of the trench, is designed to provide the desired trench sidewall taper angle.

Abstract: Disclosed herein is a method of smoothing a trench sidewall after a deep trench silicon etch process which minimizes sidewall scalloping present after the silicon trench etch. The method comprises exposing the silicon trench sidewall to a plasma generated from a fluorine-containing gas, at a process chamber pressure within the range of about 1 mTorr to about 30 mTorr, for a time period within the range of about 10 seconds to about 600 seconds. A substrate bias voltage within the range of about ?10 V to about ?40 V is applied during the performance of the post-etch treatment method of the invention.

Abstract: We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 &mgr;m in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 &mgr;m, typically less than about 500 nm, and even more typically between about 100 nm and 20 nm. Features having a sidewall taper angle, relative to an underlying substrate, typically ranges from about 85° to about 92° and exhibiting the smooth sidewalls are produced by the method. In one embodiment, a stabilizing etchant species is used constantly during the plasma etch process, while at least one other etchant species and at least one polymer depositing species are applied intermittently, typically periodically, relative to each other. In another embodiment, the stabilizing etchant species is used constantly and a mixture of the other etchant species and polymer depositing species is used intermittently.

Abstract: Disclosed herein is a method of smoothing a trench sidewall after a deep trench silicon etch process which minimizes sidewall scalloping present after the silicon trench etch. The method comprises exposing the silicon trench sidewall to a plasma generated from a fluorine-containing gas, at a process chamber pressure within the range of about 1 mTorr to about 30 mTorr, for a time period within the range of about 10 seconds to about 600 seconds. A substrate bias voltage within the range of about −10 V to about −40 V is applied during the performance of the post-etch treatment method of the invention.

Abstract: Disclosed herein is a method of etching deep trenches in a substrate which utilizes the overlying mask structure to achieve a trench having a positive tapered sidewall angle of less than about 88°. The method employs the successive etching of a lateral undercut in the substrate beneath a masking material, while at the same time etching vertically downward beneath the mask. The coordinated widening of the lateral undercut at the top of the trench, while vertically extending the depth of the trench, is designed to provide the desired trench sidewall taper angle.