Abstract: An embodiment optoelectronic semiconductor device includes a housing having a leadframe with a first and second connection conductor. The housing further has a housing body surrounding the leadframe in one or more regions. The housing body extends in a vertical direction between a mounting side of the housing body and a front side of the housing body opposite the mounting side. The first connection conductor has a recess. A semiconductor chip configured to generate radiation is arranged within the housing, and the semiconductor chip is disposed in the recess and is affixed to the first connection conductor within the recess. A side face of the recess forms a reflector for reflecting the generated radiation. The first connection conductor protrudes from the housing body at the mounting side. The semiconductor chip is, in at least some regions, free of an encapsulation material adjoining the semiconductor chip.

Abstract: An embodiment optoelectronic semiconductor device includes a housing having a leadframe with a first and second connection conductor. The housing further has a housing body surrounding the leadframe in one or more regions. The housing body extends in a vertical direction between a mounting side of the housing body and a front side of the housing body opposite the mounting side. The first connection conductor has a recess. A semiconductor chip configured to generate radiation is arranged within the housing, and the semiconductor chip is disposed in the recess and is affixed to the first connection conductor within the recess. A side face of the recess forms a reflector for reflecting the generated radiation. The first connection conductor protrudes from the housing body at the mounting side. The semiconductor chip is, in at least some regions, free of an encapsulation material adjoining the semiconductor chip.

Abstract: An optoelectronic device includes an optoelectronic component that receives or generates radiation, a frame having a cavity, the optoelectronic component being arranged in said cavity, a connection carrier to which the optoelectronic component is fixed, and a cover covering the cavity and forming a radiation passage area for the radiation, wherein a beam path from the optoelectronic component to the radiation passage area is free of an encapsulation material for the optoelectronic component.

Abstract: A package for an optoelectronic semiconductor component is disclosed. The package includes a package body, a first connecting lead and a second connecting lead. The first connecting lead and the second connecting lead each extend in a vertical direction through the package body. A semiconductor component with such a package and a semiconductor chip are also disclosed.

Abstract: An optoelectronic device includes an optoelectronic component that receives or generates radiation, a frame having a cavity, the optoelectronic component being arranged in said cavity, a connection carrier to which the optoelectronic component is fixed, and a cover covering the cavity and forming a radiation passage area for the radiation, wherein a beam path from the optoelectronic component to the radiation passage area is free of an encapsulation material for the optoelectronic component.

Abstract: A package for an optoelectronic semiconductor component is disclosed. The package includes a package body, a first connecting lead and a second connecting lead. The first connecting lead and the second connecting lead each extend in a vertical direction through the package body. A semiconductor component with such a package and a semiconductor chip are also disclosed.

Abstract: The invention concerns a radiation detector for detecting radiation having a defined spectral sensitivity distribution (14) that exhibits a sensitivity maximum at a defined wavelength ?0, wherein the radiation detector preferably contains a III-V semiconductor material and particularly preferably comprises at least one semiconductor chip (1) and at least one optical filter disposed after the semiconductor chip, the semiconductor chip containing at least one III-V semiconductor material and the optical filter absorbing radiation of a wavelength that is greater than the wavelength ?0 of the sensitivity maximum.

Abstract: The invention concerns a radiation detector for detecting radiation having a defined spectral sensitivity distribution (14) that exhibits a sensitivity maximum at a defined wavelength ?0, wherein the radiation detector preferably contains a III-V semiconductor material and particularly preferably comprises at least one semiconductor chip (1) and at least one optical filter disposed after the semiconductor chip, the semiconductor chip containing at least one III-V semiconductor material and the optical filter absorbing radiation of a wavelength that is greater than the wavelength ? of the sensitivity maximum.

Abstract: A laser diode component comprising a laser diode bar on which a specific operating voltage is impressed during operation and with which a bridging element is connected in parallel, which bridging element is in a current-blocking state when the specific operating voltage is impressed on the associated laser diode bar and which bridging element changes over to a current-conducting state as soon as the voltage drop across the laser diode bar exceeds the operating voltage by a predefined voltage value. A circuit arrangement comprising a plurality of such laser diode components which are connected in series is furthermore specified.