Patents by Inventor Michael TSIANG
Michael TSIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10030306Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: October 23, 2013Date of Patent: July 24, 2018Assignee: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Patent number: 9490116Abstract: Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.Type: GrantFiled: October 8, 2015Date of Patent: November 8, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Michael Tsiang, Praket P. Jha, Xinhai Han, Nagarajan Rajagopalan, Bok Hoen Kim, Tsutomu Kiyohara, Subbalakshmi Sreekala
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Publication number: 20160203971Abstract: Embodiments of the disclosure provide methods and system for manufacturing film layers with minimum lithographic overlay errors on a semiconductor substrate. In one embodiment, a method for forming a film layer on a substrate includes supplying a deposition gas mixture including a silicon containing gas and a reacting gas onto a substrate disposed on a substrate support in a processing chamber, forming a plasma in the presence of the depositing gas mixture in the processing chamber, applying current to a plasma profile modulator disposed in the processing chamber while supplying the depositing gas mixture into the processing chamber, and rotating the substrate while depositing a film layer on the substrate.Type: ApplicationFiled: October 8, 2015Publication date: July 14, 2016Inventors: Michael TSIANG, Praket P. JHA, Xinhai HAN, Nagarajan RAJAGOPALAN, Bok Hoen KIM, Tsutomu KIYOHARA, Subbalakshmi SREEKALA
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Publication number: 20160017497Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: September 29, 2015Publication date: January 21, 2016Inventors: NAGARAJAN RAJAGOPALAN, Xinhai HAN, Michael TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
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Patent number: 9157730Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: GrantFiled: October 17, 2013Date of Patent: October 13, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Publication number: 20150226540Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: October 23, 2013Publication date: August 13, 2015Applicant: Applied Materials, Inc.Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
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Publication number: 20140118751Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.Type: ApplicationFiled: October 17, 2013Publication date: May 1, 2014Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN