Abstract: The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

Abstract: An optoelectronic semiconductor component may include an emitter unit and a reflector. The emitter unit may include a semiconductor layer sequence having two opposing main sides, multiple lateral surfaces, and an active zone for generating radiation. The emitter unit may include electrical contact surfaces located on the main sides. The reflector may cover the main sides and all lateral surfaces apart from up to at least 90% of a single lateral surface designed for radiation emission.

Abstract: An optoelectronic component, having an optoelectronic semiconductor chip, includes a substrate, wherein at least two light-emitting sections are arranged laterally next to one another over an upper side of the substrate, the light-emitting sections are separately controllable, the light-emitting sections generate electromagnetic radiation from different spectral ranges, the light-emitting sections are formed by a layer sequence, an active region is formed inside the layer sequence, trenches are formed between the light-emitting sections, and the trenches fully divide the active region so that the light-emitting sections are separated from one another.

Abstract: In one embodiment, the optoelectronic semiconductor device has a semiconductor layer sequence arranged to generate red or orange light. A plurality of electrical through-connections extend through the semiconductor layer sequence. A first main side of the semiconductor layer sequence is electrically contacted by a first electrical contact structure. A second electrical contact structure is located on the first main side. The second contact structure electrically connects the through-connections to one another. The second contact structure is embedded in the first contact structure.

Abstract: The optoelectronic semiconductor chip may include a semiconductor layer sequence having an active zone for generating radiation between a first region and a second region. The second region is electrically contacted via electrical through-connections that are electrically connected via metallic contact strips. The first region is electrically contacted via a metallic contact layer. An electrical insulation layer is located between the contact strips and the contact layer. The contact layer and the contact strips are located on a back side of the first region. The through-connections extend from the contact strips through the first region and through the active zone into the second region. The contact strips lie at least predominantly between the back side and the contact layer.

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

Abstract: The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

Abstract: An optoelectronic component, having an optoelectronic semiconductor chip, includes a substrate, wherein at least two light-emitting sections are arranged laterally next to one another over an upper side of the substrate, the light-emitting sections are separately controllable, the light-emitting sections generate electromagnetic radiation from different spectral ranges, the light-emitting sections are formed by a layer sequence, an active region is formed inside the layer sequence, trenches are formed between the light-emitting sections, and the trenches fully divide the active region so that the light-emitting sections are separated from one another.

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.

Abstract: A light-emitting semiconductor chip, a light-emitting component and a method for producing a light-emitting component are disclosed. In an embodiment a light-emitting semiconductor chip includes a substrate having a top surface, a bottom surface opposite the top surface and a first side surface extending transversely or perpendicularly to the bottom surface, a semiconductor body arranged on the top surface of the substrate, the semiconductor body comprising an active region configured to generate light and a contacting comprising a first current distribution structure and a second current distribution structure, which is formed to supply current to the active region, wherein the semiconductor chip is free of any connection point on a side of the semiconductor body facing away from the substrate and on the bottom surface of the substrate, and wherein the connection point is a connection point for electrically contacting the first and second current distribution structures.