Patents by Inventor Michael W. CARMODY

Michael W. CARMODY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MBE growth technique for group II-VI inverted multijunction solar cells
    Patent number: 9837563
    Abstract: A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: December 5, 2017
    Assignee: EPIR Technologies, Inc.
    Inventors: Sivalingam Sivananthan, James W. Garland, Michael W. Carmody
  • MBE GROWTH TECHNIQUE FOR GROUP II-VI INVERTED MULTIJUNCTION SOLAR CELLS
    Publication number: 20110151616
    Abstract: A method of forming a Group II-VI multijunction semiconductor device comprises providing a Group IV substrate, forming a first subcell from a first Group II-VI semiconductor material, forming a second subcell from a second Group II-VI semiconductor material, and removing the substrate. The first subcell is formed over the substrate and has a first bandgap, while the second subcell is formed over the first subcell and has a second bandgap which is smaller than the first bandgap. Additional subcells may be formed over the second subcell with the bandgap of each subcell smaller than that of the preceding subcell and with each subcell preferably separated from the preceding subcell by a tunnel junction. Prior to the removal of the substrate, a support layer is affixed to the last-formed subcell in opposition to the substrate.
    Type: Application
    Filed: December 17, 2009
    Publication date: June 23, 2011
    Applicant: EPIR TECHNOLOGIES, INC.
    Inventors: Sivalingam SIVANANTHAN, James W. GARLAND, Michael W. CARMODY