Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: This disclosure describes a method for finding equivalent classes of hard defects in a stacked MOSFET array. The method includes identifying the stacked MOSFET array in a circuit netlist. The stacked MOSFET array includes standard MOSFETs sharing gate and bulk terminals. The method further includes determining electrical defects for the standard MOSFETs, grouping the electrical defects into at least one intermediate equivalent defect class based on a topological equivalence of the electrical defects, grouping the electrical defects in the at least one intermediate equivalent defect class into at least one final equivalent defect class based on an electrical equivalence of the electrical defects, performing a defect simulation on an electrical defect in the at least one final equivalent defect class, and attributing a result of the defect simulation on the electrical defect to additional electrical defects in the final equivalent defect class.

Abstract: In modern VLSI technology, often, stacked arrays of smaller sized MOSFETs are used to achieve the desired width and length of a design MOSFET. In analog defect simulation, each physical transistor can contribute to the circuit's defect universe and this can directly lead to tremendous increase in defect simulation time. Here we propose a method of finding equivalent defects in the context of stacked MOSFET arrays that can lead to significant reduction in defect simulation effort and yet provide accurate defect coverage results.

Abstract: The present invention describes mobile phone applications that include methods and systems which automatically schedule tasks from a dynamically-changing task list for efficient utilization of available time. Unlike the prior personal task scheduling systems, the proposed system uses optimization algorithms and computer programs when creating a time schedule of tasks. In order to schedule individual tasks, the system takes into account multiple constraints controllable by the user. Basic constraints include individual task's deadline, start-time, minimum and maximum time-chunks for task fragments, relative priority of tasks (in case of time-collision), etc. Further constraints may include user's general preferences regarding individual task or group of tasks. Specifically, preferences may include time-of-day (e.g., morning, evening), location (e.g., home, work, particular grocery store or chain, particular gym, park), etc.

Abstract: A method of asymmetric asynchronous decoupling of capacitors in an integrated circuit design is provided for faster simulation by circuit simulators, e.g. FastSPICE circuit simulators. This method includes removing a coupling capacitor from a list, which includes coupling capacitors that capacitively couple two nets in the design. The two nets have capacitances C1 and C2, and at least one of capacitances C1 and C2 exceeds a threshold. The coupling capacitor has capacitance Cc. When coupling capacitance Cc is low and only one of capacitances C1 and C2 has a low capacitance, then a forward capacitance can be used at whichever of the two nets has the low capacitance and a lump capacitance can be used at the other net for simulation. When coupling capacitance Cc is low and both of capacitances C1 and C2 have high capacitances, then lump capacitances can be used at the two nets for the simulation.

Abstract: A method of asymmetric asynchronous decoupling of capacitors in an integrated circuit design is provided for faster simulation by circuit simulators, e.g. FastSPICE circuit simulators. This method includes removing a coupling capacitor from a list, which includes coupling capacitors that capacitively couple two nets in the design. The two nets have capacitances C1 and C2, and at least one of capacitances C1 and C2 exceeds a threshold. The coupling capacitor has capacitance Cc. When coupling capacitance Cc is low and only one of capacitances C1 and C2 has a low capacitance, then a forward capacitance can be used at whichever of the two nets has the low capacitance and a lump capacitance can be used at the other net for simulation. When coupling capacitance Cc is low and both of capacitances C1 and C2 have high capacitances, then lump capacitances can be used at the two nets for the simulation.