Abstract: A surface of a substrate consists of a plurality of neighboring stripes. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). The disorientation angle of each of the flat surfaces is between 0 and 3 degrees and is different for each pair of neighboring flat surfaces. The substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by a MOCVD or MBE method which allow to obtain a non-absorbing mirrors laser diode emitting a light in the wavelength from 380 to 550 nm.

Abstract: The laser diode comprising crystalline substrate (1) where set of subsequent n-type layers, set of optically active layers (5) and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (2), bottom n-type cladding layer (3) and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer (7) and p-type contact layer (8). The electron blocking layer comprises Inx, AlyGa1-x-y, N alloy doped with magnesium where 1?x>0.001 a 1?y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (2, 3, 4), set of optically active layers (5) and set of p-type layers (6, 7, 8) where the p-type waveguide layer (6) and p-type contact layer (7) is deposited with presence of indium in plasma assisted molecular beam epitaxy method.