Abstract: A cavity is etched in a substrate and opens out onto the surface of the substrate facing the suspended element (1). The cavity has at least one broader zone having a cross-section which is greater than the cross-section of the cavity at said surface. A base (4) of the pillar (2), of complementary shape to the cavity, is buried in the cavity. The base (4) of the pillar (2) can form a dovetail assembly with the cavity of the substrate. This assembly is obtained by deposition, on a surface of the substrate, of a sacrificial layer and etching, in the sacrificial layer, of a hole passing through the sacrificial layer and reaching the surface of the substrate. The substrate is then etched, in the extension of the hole, so as to form the cavity of the substrate. Then a material designed to form the pillar (2) is deposited in the cavity and on the walls of the hole.

Abstract: A useful layer (1) is initially attached by a sacrificial layer (2) to a layer (3) forming a substrate. Before etching of the sacrificial layer (2), at least a part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched so as to increase the roughness of its doped part. After doping, a mask (9) is deposited on a part of the useful layer (1) so as to delineate a doped zone and a non-doped zone of the surface (4, 5), one of the zones forming a stop after the superficial etching phase.

Abstract: A cavity is etched in a substrate and opens out onto the surface of the substrate facing the suspended element (1). The cavity has at least one broader zone having a cross-section which is greater than the cross-section of the cavity at said surface. A base (4) of the pillar (2), of complementary shape to the cavity, is buried in the cavity. The base (4) of the pillar (2) can form a dovetail assembly with the cavity of the substrate. This assembly is obtained by deposition, on a surface of the substrate, of a sacrificial layer and etching, in the sacrificial layer, of a hole passing through the sacrificial layer and reaching the surface of the substrate. The substrate is then etched, in the extension of the hole, so as to form the cavity of the substrate. Then a material designed to form the pillar (2) is deposited in the cavity and on the walls of the hole.

Abstract: A useful layer (1) is initially attached by a sacrificial layer (2) to a layer (3) forming a substrate. Before etching of the sacrificial layer (2), at least a part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched so as to increase the roughness of its doped part. After doping, a mask (9) is deposited on a part of the useful layer (1) so as to delineate a doped zone and a non-doped zone of the surface (4, 5), one of the zones forming a stop after the superficial etching phase.

Abstract: An apparatus for depositing a material by evaporation on a substrate having a large surface. The apparatus includes an enclosure in which are placed a number of material evaporation sources. It also includes a device for channeling or piping of vapors emitted by the sources toward the substrate during evaporation. This is formed by walls or covers which define compartments within the enclosure, each evaporation source being placed in a compartment. The apparatus can also utilize a device for moving the substrate in order to improve the uniformity of the deposit.

Abstract: A cathodoluminescent anode is formed on an insulating substrate, while on another insulating substrate are formed cathode conductors, an insulating layer, a grid layer used for the formation of grids, holes in the insulating layer and the grid layer and microtips in the holes. Moreover, a thin insulating layer is formed on the grid layer in order to limit the current liable to flow between the anode and the grids. Another thin layer or film is formed on the thin insulating layer that is sufficiently conductive or resistive to prevent disturbance by the thin electrically insulating layer, of the electric field created between the microtips and the grids.

Abstract: According to this process a structure is produced comprising an insulating substrate (32), at least one cathode conductor (34), an insulating layer (36), a grid layer (40) and holes (42) are formed through the grid layer and the insulating layer, on the grid layer using a wet chemical deposition method is produced a lift-off layer (44), followed by the deposition on the assembly of an electron emitting material layer (52) and the elimination of the lift-off layer. Application to the manufacture of flat screens.

Abstract: A method for forming a microtip electron source includes the steps of forming a first microtip electron source using a mask, determining deviations in the structure of the first microtip electron source from a structure which should theoretically have been obtained using the first mask, and then correcting the first mask used during fabrication of the first microtip electron source that are designed to generate additional deviations that compensate for the effects upon performance of the deviations determined in the first microtip electron source when subsequent microtip electron sources are fabricated using the mask.

Abstract: Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission and using said source. Each cathode (5) comprises an electrically conductive layer (22) and micropoints (12) and, according to the invention, a continuous resistive layer (24) is provided between the conductive layer and the micropoints. The display means comprises a cathodoluminescent anode (16) facing the source.

Abstract: A process of producing a display operating by cathodoluminescence excited by field emission, including forming parallel cathodes on a glass substrate, depositing a silica coating on the cathodes, then a conductive coating and then producing a matrix of holes in the conductive coating and silica coating, depositing on the perforated conductive coating a fourth coating not covering the holes and then depositing on the complete structure a coating of an electron emitting material, eliminating the fourth coating so as to expose the microemitters, forming in the conductive coating grids crossing the cathodes and placing above the grids an anode covered by a cathodoluminescent coating.