Patents by Inventor Michel Ibrahim Ishac

Michel Ibrahim Ishac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Voltage profile for reduction of read disturb in memory cells
    Patent number: 11380394
    Abstract: An integrated circuit memory device having: a memory cell; a current sensor connected to the memory cell; a voltage driver connected to the memory cell; and a bleed circuit connected to the voltage driver. During an operation to read the memory cell, the voltage driver drives a voltage applied on the memory cell. The bleed circuit is activated to reduce the voltage during a time period in which the current sensor operates to determine whether or not at least a predetermined level of current is presented in the memory cell.
    Type: Grant
    Filed: January 26, 2021
    Date of Patent: July 5, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Mingdong Cui, Hongmei Wang, Michel Ibrahim Ishac
  • Voltage Profile for Reduction of Read Disturb in Memory Cells
    Publication number: 20210151103
    Abstract: An integrated circuit memory device having: a memory cell; a current sensor connected to the memory cell; a voltage driver connected to the memory cell; and a bleed circuit connected to the voltage driver. During an operation to read the memory cell, the voltage driver drives a voltage applied on the memory cell. The bleed circuit is activated to reduce the voltage during a time period in which the current sensor operates to determine whether or not at least a predetermined level of current is presented in the memory cell.
    Type: Application
    Filed: January 26, 2021
    Publication date: May 20, 2021
    Inventors: Mingdong Cui, Hongmei Wang, Michel Ibrahim Ishac
  • Voltage profile for reduction of read disturb in memory cells
    Patent number: 10930345
    Abstract: An integrated circuit memory device having: a memory cell; a current sensor connected to the memory cell; a voltage driver connected to the memory cell; and a bleed circuit connected to the voltage driver. During an operation to read the memory cell, the voltage driver drives a voltage applied on the memory cell. The bleed circuit is activated to reduce the voltage during a time period in which the current sensor operates to determine whether or not at least a predetermined level of current is presented in the memory cell.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: February 23, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Mingdong Cui, Hongmei Wang, Michel Ibrahim Ishac