Abstract: A process and device for plasma etching a thin layer. The process includes the steps of identifying a plateau in gas pressure that occurs slightly before the end of etching and then detecting a pressure variation (increase or decrease) from the plateau pressure. Etching is stopped at a predetermined time interval after the variation following the plateau begins. The device includes one or more pressure sensors and means for determining the plateau and subsequent pressure variation.

Abstract: The measuring detector is constituted by the resistance of a given volume of doped semiconductor, there being formed on one face of a semiconducting monocrystal a surface region having a well-determined thickness and a well-determined concentration of doping ions and two electrical contacts at the extremities of said region.The doped surface region is obtained by ion implantation and there is formed on the second face of the monocrystal a metallic coating which has good thermal conductivity and is in good thermal contact with said second face.The detector is primarily applicable to thermometric measurements at very low temperatures below 1.degree. K.

Abstract: The method of isolating integrated circuit components on a conductive silicon wafer having a deep layer isolated from a surface layer consists in forming a first deposit of low density on each surface zone in which an integrated circuit component is to be implanted while leaving an uncoated strip which separates each deposit from adjacent deposits, in forming a channel corresponding to each strip within the surface layer and partly within the deep layer, in performing selective deposition of silica on the entire wafer so as to fill the channels up to the bottom of the first deposits, and in removing the first deposits so as to leave insulating silica walls around the surface zones.

Abstract: A method for manufacturing integrated circuits, said method comprising the steps of:Providing a first set of conductive zones on each of these portions of a substrate where electrical contacts are to be made, after having suitably doped said substrate with semiconductive material,Providing a selective insulating layer, so that the upper portions of said conductive zones be flush with the surface of said selective insulating layer, andProviding thereabove a second set of conductive zones adapted to constitute intended connections between said upper portions.Said method can be applied to the manufacture of MOS transistors.