Patents by Inventor Michele Dipalo

Michele Dipalo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11624744
    Abstract: A method of recording intracellular action potentials in electrogenic cells through pores in membranes of cells formed by optoporation includes positioning a sample that includes the cells on a multi-electrode array; incubating or perfusing the sample; focusing a laser on the surface of the array electrodes, the surface contacting the sample; applying one or more laser pulses to one or more array electrodes to perform a localized breakdown of the membrane of the cells of the sample; and recording the intracellular action potentials. The surface of the electrodes is porous and has cavities and protrusions at the nanoscale level, and the electric field produced by the laser is localized and amplified to perform the localized breakdown of the membrane of the cells of the sample.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: April 11, 2023
    Inventors: Francesco De Angelis, Michele Dipalo
  • Publication number: 20230060283
    Abstract: A microfluidic device comprises a lower layer that is electrically conductive and transparent with respect to an incident optical beam, an upper layer, comprising first portions that are electrically conductive and second portions that are electrically insulating, adjacent and alternated to the first ones; a compartment interposed between the lower layer and the upper layer seamlessly extending between the lower layer and the upper layer; the compartment contains a filler medium that is transparent with respect to the incident optical beam and markers dispersed in the filler medium; the markers are electrically charged and are adapted to move inside the compartment in all directions in variable amounts according to the intensity of the electrical signal applied and to emit an optical emission beam when lit by an incident optical beam.
    Type: Application
    Filed: January 21, 2021
    Publication date: March 2, 2023
    Inventors: Francesco DE ANGELIS, Michele DIPALO, Francesco TANTUSSI, Andrea BARBAGLIA, Andrea TOMA
  • Publication number: 20230051647
    Abstract: A microfluidic device comprises a lower layer that is electrically conductive and transparent with respect to an incident optical beam, an upper layer, comprising first portions that are electrically conductive and second portions that are electrically insulating, adjacent and alternated to the first ones; a compartment seamlessly extending between the lower layer and the upper layer; the compartment contains a filler medium configured to emit an optical emission beam and markers dispersed in the filler medium, which are electrically charged and are adapted to move inside the compartment in all directions according to the intensity of the electrical signal applied to the first portions, the filler medium is configured to interact with the markers to increase or decrease the intensity of the optical emission beam according to the local concentration of the markers.
    Type: Application
    Filed: January 21, 2021
    Publication date: February 16, 2023
    Inventors: Francesco DE ANGELIS, Michele DIPALO, Francesco TANTUSSI, Andrea BARBAGLIA, Andrea TOMA
  • Publication number: 20220032296
    Abstract: A microfluidic device comprises electrically conductive lower portions, transparent to an incident optical beam; first upper portions electrically conductive and configured to receive an electrical signal; shielding portions opaque to the incident optical beam and arranged between the first upper portions and the lower portions, the shielding portions having one or more through openings; one or more compartments containing a filler means and markers dispersed in filler means. Each compartment comprises at least one lower chamber and at least one upper chamber in fluid communication with each other via said one or more through openings. Each lower chamber extends between a respective through opening and the lower portions and each upper chamber extends between at least one respective through opening and the first upper portions.
    Type: Application
    Filed: September 17, 2019
    Publication date: February 3, 2022
    Inventors: Francesco DE ANGELIS, Andrea BARBAGLIA, Michele DIPALO, Francesco TANTUSSI
  • Publication number: 20200355670
    Abstract: A method of recording intracellular action potentials in electrogenic cells through pores in membranes of cells formed by optoporation includes positioning a sample that includes the cells on a multi-electrode array; incubating or perfusing the sample; focusing a laser on the surface of the array electrodes, the surface contacting the sample; applying one or more laser pulses to one or more array electrodes to perform a localized breakdown of the membrane of the cells of the sample; and recording the intracellular action potentials. The surface of the electrodes is porous and has cavities and protrusions at the nanoscale level, and the electric field produced by the laser is localized and amplified to perform the localized breakdown of the membrane of the cells of the sample.
    Type: Application
    Filed: December 12, 2018
    Publication date: November 12, 2020
    Inventors: Francesco De Angelis, Michele Dipalo
  • Patent number: 8497513
    Abstract: The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: July 30, 2013
    Assignee: Universitat Ulm
    Inventors: Erhard Kohn, Michele Dipalo, Farid Medjdoub
  • Publication number: 20120286289
    Abstract: The invention concerns a semiconductor device comprising a structure, wherein the structure comprising a substrate, a first layer onto the substrate comprising GaN and a second layer comprising AlGaN.
    Type: Application
    Filed: February 16, 2012
    Publication date: November 15, 2012
    Applicant: UNIVERSITAT ULM
    Inventors: Michele Dipalo, Erhard Kohn
  • Publication number: 20110005942
    Abstract: The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.
    Type: Application
    Filed: February 26, 2009
    Publication date: January 13, 2011
    Applicant: Universitat Ulm
    Inventors: Erhard Kohn, Michele Dipalo, Farid Medjdoub