Abstract: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.

Abstract: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.

Abstract: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.

Abstract: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.

Abstract: A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.

Abstract: A thin-film multilayer high-Q inductor having a ferromagnetic core and spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical connection with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The first metal runners and second metal runners are oriented such that one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias., forming a continuously conductive structure having a generally helical shape.

Abstract: A thin-film multi-layer high Q transformer. To form an outer transformer winding a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical communication with each end of the first level metal runners. A fourth insulating layer is disposed over the third insulating layer and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed.

Abstract: A thin-film multi-layer high Q inductor spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical communications with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The plurality of first metal runners are in a different vertical than the plurality of second metal runners such that the planes intersect. Thus one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias.

Abstract: A thin-film multi-layer high Q transformer. To form an outer transformer winding a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical communication with each end of the first level metal runners. A fourth insulating layer is disposed over the third insulating layer and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed.

Abstract: A thin-film multi-layer high Q inductor spanning at least three metal layers is formed by forming a plurality of parallel first metal runners on the semiconductor substrate. A plurality of first and second vertical conductive vias are formed in electrical communications with each end of the plurality of metal runners. A plurality of third and fourth conductive vias are formed over the plurality of first and second conductive vias and a plurality of second metal runners are formed interconnecting the plurality of third and fourth conductive vias. The plurality of first metal runners are in a different vertical than the plurality of second metal runners such that the planes intersect. Thus one end of a first metal runner is connected to an overlying end of a second metal runner by way of the first and third vertical conductive vias. The other end of the second metal runner is connected to the next metal one runner by way of the second and fourth vertical conductive vias.