Patents by Inventor Michiaki Sakaguchi
Michiaki Sakaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230069411Abstract: A non-transitory computer readable medium stores a program causing a computer to execute: storing, in a storage unit, a character for which an acquisition condition is satisfied as a possessed character among a plurality of characters including a first character and a second character, each of the plurality of characters including the acquisition condition for acquiring the character, a special ability available in a prescribed game, and a release condition for releasing the special ability; releasing the special ability of the first character when the release condition of the first character is satisfied; releasing the special ability of the second character when the release condition of the second character is satisfied, the acquisition condition of the second character being different from the acquisition condition of the first character, and the release condition of the second character being different from the release condition of the first character; and setting, when the special ability of at least oneType: ApplicationFiled: October 26, 2022Publication date: March 2, 2023Applicant: CYGAMES, INC.Inventors: Nozomu Shibata, Ryohei Ishizuka, Michiaki Sakaguchi, Hiroki Tsuda, Koji Nara
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Patent number: 5102719Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol % of TiO.sub.2 and 50.50 to 46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of MgO and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.Type: GrantFiled: April 25, 1990Date of Patent: April 7, 1992Assignee: Canon Kabushiki KaishaInventors: Motoo Kumagai, Keiichi Kato, Matsato Nagano, Michiaki Sakaguchi
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Patent number: 5077632Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol. % of TiO.sub.2 and 50.50 to 46.00 mol. % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.Type: GrantFiled: October 23, 1990Date of Patent: December 31, 1991Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 5041327Abstract: A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.Type: GrantFiled: April 25, 1990Date of Patent: August 20, 1991Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 5034260Abstract: A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of M.sub.g O, based on 100 mol parts of said principal components, in addition to the composition of the first region.Type: GrantFiled: June 18, 1990Date of Patent: July 23, 1991Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 5006957Abstract: A ceramic-forming composition comprises from 2.0 to 5.0 mol parts of MnO.sub.2 and from 0.05 to 0.30 mol part of Y.sub.2 O.sub.3 based on 100 mol parts of a main component comprising from 50.20 to 53.50 mol % of TiO.sub.2 and from 49.80 to 46.50 mol % of SrO. A semiconductor porcelain substrate, a dielectric porcelain substrate and a capacitor are produced by using the same ceramic-forming composition.Type: GrantFiled: June 7, 1990Date of Patent: April 9, 1991Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Humio Takeuti, Masato Nagano, Michiaki Sakaguchi
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Patent number: 4992399Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol % of TiO.sub.2 and 50.50 to 46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of Al.sub.2 O.sub.3 and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.Type: GrantFiled: June 21, 1988Date of Patent: February 12, 1991Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 4990323Abstract: A composition for a reduction-reoxidation type semiconductive ceramic capcitor is disclosed which consists substantially of 100 mol % of a barium composite oxide consisting of BaTiO.sub.3 and BaZrO.sub.3 and having a BaZrO.sub.3 content in the range of 0 to 20 mol %, 0.3 to 3.0 mol % of Bi.sub.2 O.sub.3, and 0.1 to 8.5 mol % of at least one member selected from the group consisting of TiO.sub.2 and ZrO.sub.2 and further incorporates therein 0.001 to 1.00% by weight of at least one member selected from the group consisting of the oxides of Cr, Fe, Co, Zn, Cu, Al, Si, and Mg. This composition possesses a breakdown voltage of not less than 400 V, an insulation resistance of not less than 10.sup.9 .OMEGA., an electrostatic capacity of not less than 0.65 .mu.F/cm.sup.2 per unit surface area, and a magnitude, tan .delta., of less than 2.5%.Type: GrantFiled: June 14, 1989Date of Patent: February 5, 1991Assignee: Nippon Oil & Fats Co., Ltd.Inventors: Kazuhito Narumi, Fumio Takeuchi, Michiaki Sakaguchi
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Patent number: 4987107Abstract: A ceramic composition for a reduction-reoxidation type semiconductive capacitor, comprising (A) barium titanate or barium titanate and strontium titanate, (B) titanium oxide, and (C) at least one oxide selected from the group consisting of the oxides severally of La, Ce, Nb, Nd, Dy, Y, Sb, W, and Ta in a molar ratio of 100:0.01.about.15:0.01.about.10 and further comprising (D) 0.001 to 1% by weight, based on the total amount of the compounds, (A), (B), and (C), of at least one oxide selected from the group consisting of the oxides severally of Cu, Zn, Al, Mg, and Mo and exhibiting a breakdown voltage of not less than 900 V, and insulation resistance of not less than 10.sup.10 .OMEGA., an electrostatic capacity per unit surface area of not less than 0.06 .mu.F/cm.sup.2, and a low dielectric loss, tan .delta., of not more than 2.0%.Type: GrantFiled: June 2, 1989Date of Patent: January 22, 1991Assignee: Nippon Oil & Fats Co., Ltd.Inventors: Kazuhito Narumi, Fumio Takeuchi, Michiaki Sakaguchi
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Patent number: 4952538Abstract: A ceramic comprises a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of MgO, based on 100 mol parts of said principal components, in addition to the composition of the first region.Type: GrantFiled: June 30, 1988Date of Patent: August 28, 1990Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 4943469Abstract: The present invention provides a ceramic having a first region comprising a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50 to 5.30 mol parts of MnO.sub.2 and 0.02 to 0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of the principal components comprising 49.50 to 54.00 mol% of TiO.sub.2 and 50.50 to 46.00 mol% of SrO, and a second region comprising a dielectric porcelain containing further 0.40 to 5.00 mol parts of MgO and 0.05 to 2.00 mol parts of SiO.sub.2 per 100 mol parts of the principal components in addition to the composition of the first region, and also provides a circuit substrate and an electronic circuit substrate using the same ceramic.Type: GrantFiled: July 7, 1988Date of Patent: July 24, 1990Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co. Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 4942079Abstract: A ceramic comprising a first region comprises a dielectric porcelain having an insulating layer at the crystal grain boundary of a semiconductor porcelain containing 0.50-5.30 mol parts of MnO.sub.2 and 0.02-0.40 mol parts of Y.sub.2 O.sub.3 per 100 mol parts of a principal components consisting of 49.50-54.00 mol % of TiO.sub.2 and 50.50-46.00 mol % of SrO, and a second region comprising a dielectric porcelain containing further 0.40-5.00 mol parts of Al.sub.2 O.sub.3, based on 100 mol parts of said principal components, in addition to the composition of the first region.Type: GrantFiled: June 16, 1988Date of Patent: July 17, 1990Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co. Ltd.Inventors: Motoo Kumagai, Keiichi Kato, Masato Nagano, Michiaki Sakaguchi
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Patent number: 4736230Abstract: A composition for semiconductor porcelain comprisies:(a) 35.5 to 70 mol % of MgTiO.sub.3,(b) 26.5 to 61 mol % of BaTiO.sub.3,(c) a grain boundary improver, and(d) 0.01 to 0.2 mol % of an element selected from rare earth elements and the elements belonging to the group V of the periodic table.Type: GrantFiled: April 15, 1986Date of Patent: April 5, 1988Assignees: Canon Kabushiki Kaisha, Nippon Oil & Fats Co., Ltd.Inventors: Motoo Kumagai, Masato Nagano, Michiaki Sakaguchi