Patents by Inventor Michiaki Takagi

Michiaki Takagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7579932
    Abstract: A longitudinally coupled multi-mode SAW resonator filter includes input and output interdigital transducers (IDTs) with a control IDT therebetween to control a state of the surface acoustic wave. The input, output, and control IDTs alternatively arrange two different zones C and E having respective electrode period lengths PC and PE, being equal to a sum of the electrode finger width L and spacing S between electrode fingers, and a number of respective pairs MC and ME of electrode fingers is set to 1 in both zones C and E. Electrode fingers in zones C and E are all connected to a feeder conductor. Hence, a filter having small insertion loss, and a wide fractional bandwidth of 2000-4000 ppm is achieved by canceling and decreasing sums of reflected waves from the electrode fingers in zones C and E, and decreasing the effective reflection coefficient per the electrode finger.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: August 25, 2009
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Katsuro Yoneya, Masahiro Oshio
  • Publication number: 20080018416
    Abstract: It is aimed to provide a resonator type SAW filter having a relatively wide fractional bandwidth by canceling and decreasing reflection coefficients of electrode fingers each other with a ΒΌ wavelength electrode in a multi-longitudinal-mode-coupled resonator type SAW filter. The resonator type SAW filter includes, on a piezoelectric substrate, an input interdigital transducer that excites a surface acoustic wave, an output interdigital transducer that receives the surface acoustic wave excited by the input interdigital transducer, a control interdigital transducer interposed between the input interdigital transducer and the output interdigital transducer that controls a state of the surface acoustic wave, and a pair of reflectors arranged on outer sides of both the input interdigital transducer and the output interdigital transducer. And, the input interdigital transducer, the output interdigital transducer, and the control interdigital transducer alternatively arrange two different zones C and E.
    Type: Application
    Filed: July 1, 2005
    Publication date: January 24, 2008
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Michiaki Takagi, Katsuro Yoneya, Masahiro Oshio
  • Patent number: 6946932
    Abstract: In a substrate in which a reflection coefficient ? of a surface acoustic wave per electrode is small, the invention obtains a Q value or a CI value level, which is equivalent to or higher than that of a related art product, at a device size which is equivalent to the related art product which addresses the problem that the size of a surface acoustic wave resonator becomes larger. A surface acoustic wave resonator includes one interdigital transducer to excite a surface acoustic wave in a propagation direction x on a piezoelectric plate and a pair of reflectors arranged on both sides thereof in the propagation direction. The interdigital transducer is divided into three regions. The electrode fingers of the interdigital transducer of each region are formed at a fixed pitch which differs within 2%. The surface acoustic wave resonator possesses a single peak response.
    Type: Grant
    Filed: October 7, 2003
    Date of Patent: September 20, 2005
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Yoshio Maeda, Takashi Yamazaki, Keigo Iizawa
  • Patent number: 6937116
    Abstract: The invention provides a longitudinal double-mode SAW filter that has a large reflection coefficient by the electrode conductors and having flat pass band characteristics. In the longitudinal double-mode SAW filter, nearly all of higher-order natural mode oscillation displacements A0, S1 and A1 are made present in the first and second interdigital transducer regions. An electrode finger phase weighting is formed to correspond to a BPSK sign where a phase sign changes into 0 or ? at a polarity-changing point on an electrode charge distribution function Q(x) that generates on the electrode due to natural modes of oscillation. A single pair of natural modes, which exist stationary in the direction X of propagation of the surface acoustic waves that are utilized, is selected. A symmetrical mode charge distribution (Q(x), ?Q(x)) and an obliquely symmetrical mode charge distribution (Q(x), Q(x)) are generated in order to correspond to the regions of IDT1 and IDT2.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: August 30, 2005
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Masahiro Oshio, Satoru Hayashi, Katsuro Yoneya
  • Publication number: 20040251989
    Abstract: In a substrate in which a reflection coefficient &ggr; of a surface acoustic wave per electrode is small, the invention obtains a Q value or a CI value level, which is equivalent to or higher than that of a related art product, at a device size which is equivalent to the related art product which addresses the problem that the size of a surface acoustic wave resonator becomes larger. A surface acoustic wave resonator includes one interdigital transducer to excite a surface acoustic wave in a propagation direction x on a piezoelectric plate and a pair of reflectors arranged on both sides thereof in the propagation direction. The interdigital transducer is divided into three regions. The electrode fingers of the interdigital transducer of each region are formed at a fixed pitch which differs within 2%. The surface acoustic wave resonator possesses a single peak response.
    Type: Application
    Filed: October 7, 2003
    Publication date: December 16, 2004
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Michiaki Takagi, Yoshio Maeda, Takashi Yamazaki, Keigo Iizawa
  • Publication number: 20040212455
    Abstract: The invention provides a longitudinal double-mode SAW filter that has a large reflection coefficient by the electrode conductors and having flat pass band characteristics. In the longitudinal double-mode SAW filter, nearly all of higher-order natural mode oscillation displacements A0, S1 and A1 are made present in the first and second interdigital transducer regions. An electrode finger phase weighting is formed to correspond to a BPSK sign where a phase sign changes into 0 or &pgr; at a polarity-changing point on an electrode charge distribution function Q(x) that generates on the electrode due to natural modes of oscillation. A single pair of natural modes, which exist stationary in the direction X of propagation of the surface acoustic waves that are utilized, is selected. A symmetrical mode charge distribution (Q(x), −Q(x)) and an obliquely symmetrical mode charge distribution (Q(x), Q(x)) are generated in order to correspond to the regions of IDT1 and IDT2.
    Type: Application
    Filed: February 10, 2004
    Publication date: October 28, 2004
    Applicant: SEIKO EPSON CORPORATION
    Inventors: Michiaki Takagi, Masahiro Oshio, Satoru Hayashi, Katsuro Yoneya
  • Patent number: 6384698
    Abstract: A transversally coupled double-mode SAW filter using a surface acoustic wave has two SAW resonators which have curtain-like electrodes and a pair of reflectors on both side thereof, respectively, and which are disposed in parallel on a piezoelectric flat plate in the propagation direction of the surface acoustic wave. The curtain-like electrodes of the SAW resonators have a first bus bar of electrically positive electrode which extends in the propagation direction of SAW and second and third bus bars of electrically negative electrode which extend in parallel on both sides of the first bus bar. The first bus bar has multiple electrode fingers of electrically positive electrode which face the second and third bus bars on both sides thereof and which extend in a direction perpendicular to the propagation direction of SAW so as to suitably have a space of &lgr;/2, &lgr; being the wavelength of the surface acoustic wave, and a width of &lgr;/4.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: May 7, 2002
    Assignee: Seiko Epson Corporation
    Inventors: Satoru Hayashi, Michiaki Takagi, Takashi Yamazaki
  • Patent number: 6335667
    Abstract: A multi-longitudinal-mode-coupled resonator type SAW filter having flat passband characteristic is provided. In the multi-longitudinal-mode-coupled resonator type SAW filter, an energy trapped type SAW resonator is formed on a frequency upward type piezoelectric substrate, and an IDT is divided into three IDTs, a first IDT arranged to a transmitter side, a second IDT arranged to a receiver side, and a third IDT arranged between the first IDT and the second IDT to control the amplitude of the vibration displacement in two modes for forming a filter. A frequency potential is optimized by changing an electrode period length of each IDT. Resonance amplitude strengths in the two modes are thus equalized and passband transmission characteristics are thus flattened. A filter having a relatively wide bandwidth of 1000 to 1500 ppm is fabricated by using a substrate having a small electromechanical coupling factor, such as a quartz crystal substrate.
    Type: Grant
    Filed: April 13, 2000
    Date of Patent: January 1, 2002
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Satoru Hayashi, Takashi Yamazaki
  • Patent number: 6160339
    Abstract: To provide a two-port SAW resonator in which spurious responses causes by higher-order vertical inharmonic modes are suppressed, a pair of reflectors and three IDTs are provided on the surface of a piezoelectric plate. The frequency-increase rate of the second and third IDTs is set to be smaller than that of the first IDT so that the frequency-increase rate of the first IDT is 2000 to 12000 ppm. In addition, by setting the number of pairs of the electrodes of the second and third IDTs at 2.75 to 3.75 or a quarter of the number of pairs of the electrodes of all the IDTs, spurious responses caused by higher-order vertical inharmonic modes are suppressed, and equivalent series resistance is reduced to approximately 20.OMEGA.. Therefore, a two-port SAW resonator having a superior frequency stability in a high-frequency band of 500 MHz or higher is realized.
    Type: Grant
    Filed: July 7, 1999
    Date of Patent: December 12, 2000
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Takashi Yamazaki
  • Patent number: 5912602
    Abstract: A high-precision surface acoustic wave (SAW) device improves the frequency-temperature characteristics of a conventional surface acoustic wave device several-fold. In this high-precision surface acoustic wave device, two one-port SAW resonators, or two two-port SAW resonators, alternatively, two one-port-resonator-type, two-port-resonator-type or transversal-type filters are placed in parallel with each other. Further, these resonators or filters are excited and are elastically coupled to each other in such a way as to be in an oblique symmetry mode. Moreover, the frequency-temperature characteristics of the two elements are made to differ from each other. Furthermore, a flat frequency-temperature characteristic, which cannot be realized by a single element, is realized by being synthesized from the frequency-temperature characteristics of the two elements.
    Type: Grant
    Filed: October 18, 1996
    Date of Patent: June 15, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Shigeo Kanna, Eishi Momosaki
  • Patent number: 5895996
    Abstract: A SAW device utilizing elastic surface waves, in which the Q value indicating resonance sharpness is high, and which presents excellent frequency temperature characteristics and short-term frequency stability. In a SAW device according to the present invention, an IDT and two reflectors are in parallel in the propagation direction of the phase of the elastic surface waves. The IDT and reflectors are disposed to cover the power flow direction, which is the propagation direction of energy of the elastic surface waves, whereby the energy of the elastic surface waves is efficiently confined. Moreover, it becomes possible to manufacture the SAW device utilizing a piezoelectric crystal in which angle .theta. and angle .psi. indicating excellent frequency temperature characteristics are 25 to 45 degrees and 40 to 47 degrees, respectively. It is also possible to manufacture the SAW device utilizing a piezoelectric crystal where angle .psi. is related to angle .theta. such that .theta.=2.775.times.(.psi.-32.5)+6.
    Type: Grant
    Filed: May 29, 1996
    Date of Patent: April 20, 1999
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Eishi Momosaki, Yoshinori Ikusaka
  • Patent number: 5607236
    Abstract: A quartz oscillator temperature sensor which measures temperature based on the change in resonance or oscillation frequency of a quartz oscillator with the change in temperature the oscillator can be constructed by cutting a piece of quartz from a wafer with a thickness of about 80 to 150 .mu.m by rotating the plane of the crystal defined by the electrical and mechanical axes 15.degree. to 25.degree. about the electrical axis and then forming the wafer into a quartz tuning fork. The tuning fork is housed in a case sealed with a stem and coupled to electrical leads with heat resistent solder formed with more than about 90 wt % Pb and less than 10% Sn. The area within the case should be at a substantially high vacuum.
    Type: Grant
    Filed: June 30, 1994
    Date of Patent: March 4, 1997
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Mitsuru Nagai
  • Patent number: 5325574
    Abstract: A quartz oscillator temperature sensor which measures temperature based on the change in resonance or oscillation frequency of a quartz oscillator with the change in temperature of the oscillator can be constructed by cutting a piece of quartz from a wafer with a thickness of about 80 to 150 .mu.m by rotating the plane of the crystal defined by the electrical and mechanical axes 15 to 25.degree. about the electrical axis and then forming the wafer into a quartz tuning fork. The tuning fork is housed in a case sealed with a stem and coupled to electrical leads with heat resistent solder formed with more than about 90 wt % Pb and less than 10% Sn. The area within the case should be at a substantially high vacuum.
    Type: Grant
    Filed: August 27, 1993
    Date of Patent: July 5, 1994
    Assignee: Seiko Epson Corporation
    Inventors: Michiaki Takagi, Mitsuru Nagai
  • Patent number: 4468634
    Abstract: An oscillator circuit for simultaneously outputting two frequency signals comprises a single resonator vibrating in two modes at different frequencies, an amplitude modulating circuit for modulating one of said two frequencies with a third frequency, a feedback circuit receiving the output of the amplitude modulating circuit, a detector demodulating the amplitude modulated signal, the demodulated signal being the third frequency used to modulate the output of the resonator. The two frequencies of the resonator are close together in value and the third frequency signal is the difference in frequency of the two resonator outputs. Circuit outputs are one resonator frequency and the difference frequency.
    Type: Grant
    Filed: November 17, 1981
    Date of Patent: August 28, 1984
    Assignee: Kabushiki Kaisha Suwa Seikosha
    Inventors: Michiaki Takagi, Eishi Momosaki