Abstract: An imaging device includes a first pixel including a first photoelectric conversion region and a first amplification transistor, a second pixel adjacent the first pixel and including a second photoelectric conversion region and a second amplification transistor, and a first contact coupled to the first amplification transistor and the second amplification transistor, and that receives a power supply signal for the first amplification transistor and the second amplification transistor.

Abstract: An electronic device comprising circuitry configured to accumulate, in a multiphase exposure, multiple sub-exposures with same phase data in an associated phase memory.

Abstract: An imaging device includes a first pixel #1 including a first photoelectric conversion region and a first amplification transistor AMPO, a second pixel #2 adjacent the first pixel #1 and including a second photoelectric conversion region and a second amplification transistor AMP1, and a first contact C1 coupled to the first amplification transistor AMPO and the second amplification transistor AMP1, and that receives a power supply signal VDD for the first amplification transistor and the second amplification transistor. That is, neighboring pixels in a same row share a VDD contact. A wiring may connect the VDD nodes of amplification transistors AMP for an entire row of pixels. Reset transistors RSTO and RST1, and overflow transistors OFG of each pixel #1 and #2 may be connected to a same power supply. This power supply may be the same or different from the power supply VDD.

Abstract: A pixel array includes a plurality of pixels. Each pixel includes a photoelectric conversion region that converts incident light into electric charge, and a charge transfer section coupled to the photoelectric conversion region and having line symmetry along a first axis in a plan view. The charge transfer section includes a first transfer transistor coupled to a first floating diffusion and the photoelectric conversion region and located at a first side of the photoelectric conversion region, and a second transfer transistor coupled to a second floating diffusion and the photoelectric conversion region and located at the first side of the photoelectric conversion region.

Abstract: The present disclosure pertains to a time-of-flight device with a light detection portion including at least one photo conversion portion and a first biasing voltage portion and a second biasing voltage portion adjacent to the at least one photo conversion portion for generating an electric field across the at least one photo conversion portion.

Abstract: An imaging device includes a pixel including a photoelectric conversion region, a first transfer transistor coupled to the photoelectric conversion region, a first floating diffusion, a second floating diffusion, a second transfer transistor coupled between the first floating diffusion and the second floating diffusion to control access to the second floating diffusion, a third transfer transistor coupled to the photoelectric conversion region, a third floating diffusion coupled, a fourth floating diffusion, and a fourth transfer transistor coupled between the third floating diffusion and the fourth floating diffusion to control access to the fourth floating diffusion. The imaging device includes a first wiring layer including a first wiring connected to the second floating diffusion, a second wiring connected to the fourth floating diffusion, and a third wiring connected to ground and capacitively coupled with the first wiring and the second wiring.

Abstract: An imaging device includes a first pixel. The first pixel includes a first photoelectric conversion region, and first and second transistors coupled to the first photoelectric conversion region to transfer charge generated by the first photoelectric conversion region. The imaging device includes a first driving circuit and a second driving circuit to drive the first pixel in a first mode and a second mode, the first mode being a mode in which the first driving circuit applies a first set of transfer signals to the first and second transfer transistors, the second mode being a mode in which the second driving circuit applies a transfer signal to only one of the first and second transfer transistors.

Abstract: A time-of-flight apparatus has a light source for emitting a light pulse to a scene; a photo-detection portion for detecting at least the light pulse reflected from the scene within a first photo-detection time interval, wherein the photo-detection portion includes at least one photo-detection element; and a measurement circuitry configured to: drive, within a measurement time interval including the first photo-detection time interval, the at least one photo-detection element for detecting the light pulse reflected from the scene, and drain, within the measurement time interval and after the first photo-detection time interval, electrons from the at least one photo-detection element.

Abstract: An electronic device comprising circuitry configured to accumulate, in a multiphase exposure, multiple sub-exposures with same phase data in an associated phase memory.