Patents by Inventor Michihiko Inaba
Michihiko Inaba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11398577Abstract: A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.Type: GrantFiled: January 23, 2018Date of Patent: July 26, 2022Assignee: Kabushiki Kaisha ToshibaInventors: Soichiro Shibasaki, Kazushige Yamamoto, Hiroki Hiraga, Naoyuki Nakagawa, Mutsuki Yamazaki, Shinya Sakurada, Michihiko Inaba, Hitomi Saito
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Patent number: 10199590Abstract: In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.Type: GrantFiled: November 28, 2016Date of Patent: February 5, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki Nakao, Satoshi Takayama, Akihiko Ono, Haruhi Oooka, Michihiko Inaba
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Publication number: 20180151771Abstract: A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.Type: ApplicationFiled: January 23, 2018Publication date: May 31, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Soichiro Shibasaki, Kazushige Yamamoto, Hiroki Hiraga, Naoyuki Nakagawa, Mutsuki Yamazaki, Shinya Sakurada, Michihiko Inaba, Hitomi Saito
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Patent number: 9985146Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nA and nB satisfy the relation 100/110?nB/nA?110/100. nA is the refractive index of the transparent electrode. nB is the refractive index of the oxide layer.Type: GrantFiled: September 17, 2015Date of Patent: May 29, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Hiroki Hiraga, Soichiro Shibasaki, Naoyuki Nakagawa, Mutsuki Yamazaki, Kazushige Yamamoto, Shinya Sakurada, Michihiko Inaba
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Patent number: 9941434Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode comprising an electrode layer on the substrate and an intermediate interface layer, a light absorbing layer on the intermediate interface layer. The electrode layer comprises Mo or W. The intermediate interface layer is a compound thin film of a compound comprising Mo or W and at least one element X selected from the group consisting of S, Se, and Te. The intermediate interface layer has a crystal phase and an amorphous phase with which the crystal phase is covered.Type: GrantFiled: September 15, 2015Date of Patent: April 10, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Naoyuki Nakagawa, Soichiro Shibasaki, Hiroki Hiraga, Hitomi Saito, Mutsuki Yamazaki, Kazushige Yamamoto, Shinya Sakurada, Michihiko Inaba
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Patent number: 9722123Abstract: A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI2 compound layer and a group I2-II-IV-VI4 compound layer. The intermediate layer has an n+-type Si sublayer and at least one selected from a p+-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.Type: GrantFiled: March 20, 2014Date of Patent: August 1, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Kazushige Yamamoto, Naoyuki Nakagawa, Soichiro Shibasaki, Hiroki Hiraga, Mutsuki Yamazaki, Shinya Sakurada, Michihiko Inaba
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Patent number: 9705018Abstract: A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode.Type: GrantFiled: November 20, 2013Date of Patent: July 11, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoyuki Nakagawa, Soichiro Shibasaki, Hiroki Hiraga, Mutsuki Yamazaki, Kazushige Yamamoto, Shinya Sakurada, Michihiko Inaba
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Publication number: 20170077432Abstract: In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.Type: ApplicationFiled: November 28, 2016Publication date: March 16, 2017Inventors: Hideyuki Nakao, Satoshi Takayama, Akihiko Ono, Haruhi Oooka, Michihiko Inaba
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Patent number: 9595912Abstract: A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region.Type: GrantFiled: December 18, 2013Date of Patent: March 14, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Kazushige Yamamoto, Hiroshi Ohno, Soichiro Shibasaki, Hiroki Hiraga, Naoyuki Nakagawa, Mutsuki Yamazaki, Shinya Sakurada, Michihiko Inaba
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Publication number: 20160087118Abstract: A photoelectric conversion device of an embodiment has a bottom electrode, an intermediate layer on the bottom electrode, a p-type light absorbing layer on the intermediate layer, and an n-type layer on the p-type light absorbing layer. The bottom electrode is a first metal film or a semiconductor film. When the bottom electrode is a metal film, the intermediate layer comprises an oxide film or a sulfide film. When the bottom electrode is a semiconductor film, the intermediate layer comprises a second metal film and an oxide film or a sulfide film on the second metal film.Type: ApplicationFiled: September 15, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Soichiro SHIBASAKI, Kazushige YAMAMOTO, Hiroki HIRAGA, Naoyuki NAKAGAWA, Mutsuki YAMAZAKI, Hitomi SAITO, Shinya SAKURADA, Michihiko INABA
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Publication number: 20160087125Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nA and nB satisfy the relation 100/110?nB/nA?110/100. nA is the refractive index of the transparent electrode. nB is the refractive index of the oxide layer.Type: ApplicationFiled: September 17, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Hiroki HIRAGA, Soichiro SHIBASAKI, Naoyuki NAKAGAWA, Mutsuki YAMAZAKI, Kazushige YAMAMOTO, Shinya SAKURADA, Michihiko INABA
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Publication number: 20160087127Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode comprising an electrode layer on the substrate and an intermediate interface layer, a light absorbing layer on the intermediate interface layer. The electrode layer comprises Mo or W. The intermediate interface layer is a compound thin film of a compound comprising Mo or W and at least one element X selected from the group consisting of S, Se, and Te. The intermediate interface layer has a crystal phase and an amorphous phase with which the crystal phase is covered.Type: ApplicationFiled: September 15, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Naoyuki NAKAGAWA, Soichiro SHIBASAKI, Hiroki HIRAGA, Hitomi SAITO, Mutsuki YAMAZAKI, Kazushige YAMAMOTO, Shinya SAKURADA, Michihiko INABA
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Patent number: 9269916Abstract: An organic thin-film solar cell module according to one embodiment includes solar cell panels and reflective surfaces. Each panel includes a substrate, a 1st electrode, a 2nd electrode and a photoelectric conversion layer. When supposing a 1st plane including the reflective surface, a 1st intersection line as a line of intersection of the 1st plane and the 2nd main surface of the substrate, and a 2nd plane including the 1st intersection line and forming an angle of 45° with the 2nd main surface of the substrate and an angle smaller than 45° with the 1st plane, an edge of the photoelectric conversion layer is in contact with the 2nd plane or the 2nd plane intersects the photoelectric conversion layer.Type: GrantFiled: March 14, 2012Date of Patent: February 23, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Takayama, Hideyuki Nakao, Akihiko Ono, Michihiko Inaba
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Publication number: 20150228919Abstract: According to one embodiment, there is provided an organic photovoltaic cell including substrate having a plurality of inclined surfaces and a plurality of solar cells formed on the inclined surfaces of the substrate. Each of the solar cells includes a pair of electrodes and a bulk heterojunction active layer interposed between the electrodes, the active layer containing a p-type organic semiconductor and an n-type organic semiconductor. An inclination of each of the inclined surfaces of the substrate against the horizontal plane is in the range of 60 to 89°, and the active layer exhibits a transmission of light within visible wavelength range of 3% or greater.Type: ApplicationFiled: April 24, 2015Publication date: August 13, 2015Inventors: Mitsunaga SAITO, Masahiro HOSOYA, Michihiko INABA
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Publication number: 20150087107Abstract: A method for manufacturing a photoelectric conversion device of an embodiment includes forming, on a first electrode, a photoelectric conversion layer comprising at least one of a chalcopyrite compound, a stannite compound, and a kesterite compound. The forming of the photoelectric conversion layer includes forming a photoelectric conversion layer precursor comprising at least one compound semiconductor of a chalcopyrite compound, a stannite compound, and a kesterite compound on the first electrode. The forming of the photoelectric conversion layer includes immersing the precursor in a liquid including at least one of Group IIa and Group IIb elements at 0° C. to 60° C., after forming of the photoelectric conversion layer precursor. The compound semiconductor on a side of the first electrode is at least either amorphous or larger in average crystal grain size than the compound semiconductor on an opposite side of the first electrode.Type: ApplicationFiled: September 5, 2014Publication date: March 26, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Hiroki HIRAGA, Naoyuki NAKAGAWA, Soichiro SHIBASAKI, Mutsuki YAMAZAKI, Kazushige YAMAMOTO, Shinya SAKURADA, Michihiko INABA
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Publication number: 20150083186Abstract: A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.Type: ApplicationFiled: September 5, 2014Publication date: March 26, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Soichiro SHIBASAKI, Kazushige YAMAMOTO, Hiroki HIRAGA, Naoyuki NAKAGAWA, Mutsuki YAMAZAKI, Shinya SAKURADA, Michihiko INABA, Hitomi SAITO
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Patent number: 8907207Abstract: A solar cell module according to an embodiment includes a solar cell device and a support structure supporting the solar cell device. The solar cell device is a belt-like solar cell device including first portions arranged in one direction such that major surfaces thereof face each other, and a second portion interposed between the first portions. The edges of the first portions that correspond to a pair of long sides of the solar cell device are parallel to each other. Two adjacent first portions incline forwardly and backwardly with respect to the one direction. The second portion includes one or more planar or curved surfaces to connect the two adjacent first portions to each other.Type: GrantFiled: March 16, 2012Date of Patent: December 9, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Haruhi Oooka, Mitsunaga Saito, Masahiro Hosoya, Hiroki Iwanaga, Michihiko Inaba
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Publication number: 20140344189Abstract: An electricity rate managing system includes a memory that stores a general electricity distributing fee unit price, and a renewable energy buying fee unit price, and a fee unit price calculator that calculates various fee unit prices. The fee unit price calculator adjusts a supplied electricity fee unit price so as to exceed the general electricity distributing fee unit price, and adjusts a renewable energy power generation fee unit price so as to exceed the renewable energy buying fee unit price.Type: ApplicationFiled: May 16, 2014Publication date: November 20, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Eiji Ienaga, Hidero Iijima, Michihiko Inaba, Yasuhiro Morita
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Publication number: 20140290727Abstract: A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI2 compound layer and a group I2-II-IV-VI4 compound layer. The intermediate layer has an n+-type Si sublayer and at least one selected from a p+-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.Type: ApplicationFiled: March 20, 2014Publication date: October 2, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Kazushige YAMAMOTO, Naoyuki Nakagawa, Soichiro Shibasaki, Hiroki Hiraga, Mutsuki Yamazaki, Shinya Sakurada, Michihiko Inaba
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Publication number: 20140246087Abstract: An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction, wherein the n-type portion comprises a dopant which has a formal charge Vb being not less than 1.60 and not more than 2.83.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroki Hiraga, Soichiro Shibasaki, Naoyuki Nakagawa, Mutsuki Yamazaki, Kazushige Yamamoto, Shinya Sakurada, Michihiko Inaba