Abstract: Particles such as nanoparticles in a sample are analyzed by single-particle inductively coupled plasma-mass spectrometry (spICP-MS). The sample is processed in an ICP-MS system to acquire time scan data corresponding to ion signal intensity versus time. A signal distribution, corresponding to ion signal intensity and the frequency at which the ion signal intensity was measured, is determined from the time scan data. A particle detection threshold is determined as an intersection point of an ionic signal portion and a particle signal portion of the signal distribution. The particle signal portion corresponds to measurements of particles in the sample, and the ionic signal portion corresponds to measurements of components in the sample other than particles. The particle detection threshold separates the particle signal portion from the ionic signal portion, and may be utilized to determine data regarding the particles.

Abstract: Particles such as nanoparticles in a sample are analyzed by single-particle inductively coupled plasma-mass spectrometry (spICP-MS). The sample is processed in an ICP-MS system to acquire time scan data corresponding to ion signal intensity versus time. A signal distribution, corresponding to ion signal intensity and the frequency at which the ion signal intensity was measured, is determined from the time scan data. A particle detection threshold is determined as an intersection point of an ionic signal portion and a particle signal portion of the signal distribution. The particle signal portion corresponds to measurements of particles in the sample, and the ionic signal portion corresponds to measurements of components in the sample other than particles. The particle detection threshold separates the particle signal portion from the ionic signal portion, and may be utilized to determine data regarding the particles.

Abstract: Adhesive tapes, articles containing the adhesive tapes, methods of making the adhesive tapes, and uses of the adhesive tapes are described. The adhesive tape is stretch releasable and can be used to couple two substrates together. The adhesive tape can be removed easily to separate the two substrates for any reason. The adhesive tape includes a backing layer and at least one pressure-sensitive adhesive layer adjacent to the backing layer. The backing layer contains a first acrylic copolymer. Each pressure-sensitive adhesive layer contains a second acrylic copolymer plus inorganic particles that are dispersed or suspended in the second acrylic copolymer.

Abstract: Adhesive tapes, articles containing the adhesive tapes, methods of making the adhesive tapes, and uses of the adhesive tapes are described. The adhesive tape is stretch releasable and can be used to couple two substrates together. The adhesive tape can be removed easily to separate the two substrates for any reason. The adhesive tape includes a backing layer and at least one pressure-sensitive adhesive layer adjacent to the backing layer. The backing layer contains a first acrylic copolymer. Each pressure-sensitive adhesive layer contains a second acrylic copolymer plus inorganic particles that are dispersed or suspended in the second acrylic copolymer.

Abstract: A stretch releasable adhesive article includes first and second opposed major surfaces and a pull tab, and at least a portion of at least one of the first and second major surfaces is adhesive. The adhesive article has a cross-sectional area—as measured normal to the axis defined by a stretch release force applied to the pull tab during the stretch release process—that has a defined width to thickness ratio, and the adhesive article may have a visible light transmission of at least about 90%, and a haze of no greater than 5%.

Abstract: An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film. The fabrication process includes forming the interlayer insulation layer having a silicon oxide film by plasma CVD using silane and N.sub.2 O and processing an upper surface of the interlayer insulation layer by plasma under a nitrogen atmosphere to form a plasma processed nitrogen layer.

Abstract: A Fabrication process for a semiconductor device, in which an element separation region and a gate insulation layer are formed on a surface of a silicon layer of a semiconductor substrate. Then, a gate electrode wiring is formed on the surface of the silicon layer and an insulation layer spacer is formed at the side surface of the gate electrode wiring. Diffusion layers to be a source and drain regions are formed in a predetermined region on the surface of the silicon layer. At least the surface of the diffusion region is converted into an uneven surface. Then, a refractory metal (e.g. titanium layer) is deposited on the entire surface, a refractory metal silicide layer is selectively formed on at least one of the surfaces of the diffusion layers by annealing, and a non-reacted refractory metal layer is selectively removed. Thus, in advance of deposition of titanium layer, unevenness is formed on the exposed surfaces of the diffusion layers and the upper surface of the polycrystalline silicon layer.

Abstract: The present invention discloses a process for manufacturing a semiconductor device in which characteristics of an aluminum alloy film are prevented from deteriorating, when a titanium film is used as an under film and the aluminum alloy film is heated to fill a via hole therewith. Interlayered insulating film is formed on a first aluminum wire, and after the formation of a via hole which reaches the first aluminum wire, a titanium film and an aluminum alloy film are formed in turn by a sputtering process. Next, a silicon substrate is heated up to 450.degree. to 500.degree. C. to melt the aluminum alloy film, thereby filling the via hole therewith. In this case, the thickness of the titanium film is set to 10% or less of the thickness of the aluminum alloy film and at most 25 nm.

Abstract: An upper wiring layer formed with a bonding pad portion has a stacked structure of a first titanium nitride film, a titanium film, a second titanium nitride film and an aluminum alloy film on the upper surface of an interlayer insulation layer. Also, the upper wiring has a stacked structure of titanium silicide film, the titanium film, the titanium nitride film and the aluminum alloy film.