Patents by Inventor Michio Arai

Michio Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6623339
    Abstract: A lens machining apparatus is provided that can execute everything required in machining eyeglass lenses, from measurement to various kinds of machining, and still can ensure high-precision machining. A lens holding unit 12 which holds a lens 1 and causes the same to turn, a cutter 131 which cuts (edges) the circumferential surface of the lens in a prescribed cross-sectional shape, an end mill 141 which machines a groove in the circumferential surface of the lens whose circumferential surface has been cut (edged) and chamfers edges at the lens circumferential surface, and a lens measurement unit 15 which measures the shape and the position of the lens held by the lens holding unit are comprised.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: September 23, 2003
    Assignee: Hoya Corporation
    Inventors: Takashi Igarashi, Shuichi Sato, Yoshihiro Kikuchi, Michio Arai, Satoshi Annaka
  • Publication number: 20030143936
    Abstract: This apparatus includes a unit for adhering an elastic seal to a lens holder, a unit for causing the lens holder, to which the elastic seal is adhered, to hold a lens, a pivotal arm, an arm driving unit for pivoting the pivotal arm, a clamp unit attached to the pivotal arm to be vertically movable to hold the lens holder, and a clamp driving unit for vertically moving the clamp unit. The pivotal arm is pivoted to sequentially adhere the elastic seal to the lens holder and hold the lens by the lens holder.
    Type: Application
    Filed: December 10, 2002
    Publication date: July 31, 2003
    Inventors: Takashi Igarashi, Shinichi Yokoyama, Michio Arai, Masahiko Samukawa, Shuichi Sato
  • Publication number: 20030139104
    Abstract: The purpose of the present invention is to provide a shell laminated structure realizing a further light weight formation of a helmet while improvement for shock absorbing characteristic is assured. There is provided a laminated structure in which either the net-like member or the sheet-like member having many holes is placed at an entire region of the shell having a reinforcing base material or between the laminated layers at a part of the shell in such a manner that the sheet-like member is extended along the layer to which its front and rear surfaces are faced, bitten into the layer and fixed. With such an arrangement as above, a further light weight formation of the shell is realized while a high safety characteristics of the helmet is assured.
    Type: Application
    Filed: April 18, 2000
    Publication date: July 24, 2003
    Inventor: Michio Arai
  • Patent number: 6597109
    Abstract: The object of the present invention is to provide an organic EL device capable of preventing current leakage and maintaining a long lifetime, a high luminance, a high efficiency and a high display quality. The object can be achieved by an organic EL element comprising a hole injecting electrode, an electron injecting electrode and at least one organic layer placed between these electrodes, wherein the organic layer has a thickness of at least 100 nm and an electron- or hole-mobility of 0.5-5×10−3 cm2/V.s.
    Type: Grant
    Filed: July 6, 1998
    Date of Patent: July 22, 2003
    Assignee: TDK Corporation
    Inventors: Michio Arai, Kenji Nakaya, Tetsushi Inoue
  • Patent number: 6596572
    Abstract: A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 &mgr;m2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 &mgr;m2 or less.
    Type: Grant
    Filed: February 2, 1998
    Date of Patent: July 22, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd
    Inventors: Isamu Kobori, Michio Arai
  • Patent number: 6514803
    Abstract: In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using a gas made up of poly silane SinH2(n+1), where n is an integer, and chloride gas, and effecting solid phase growth to produce said amorphous silicon layer. The addition of chlorine to the CVD gas used in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature with a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.
    Type: Grant
    Filed: November 4, 1997
    Date of Patent: February 4, 2003
    Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Isamu Kobori
  • Patent number: 6501014
    Abstract: An object of the invention is to provide a coated article having a protective member which is improved in light transparency, heat resistance, and weather resistance, and easy to manufacture, as typified by a solar battery module which experience no deterioration of performance during long-term outdoor installation; and to provide a coated article capable of protecting a functional film or device from water vapor and gases for dramatically improve the life of the functional film or device. These objects are achieved by a coated article having as a protective member a silica coating which is obtained by applying a polysilazane-containing coating solution on at least one surface of a resinous substrate having light transparency and heat resistance under atmospheric pressure, followed by steam oxidation and heat treatment.
    Type: Grant
    Filed: October 6, 2000
    Date of Patent: December 31, 2002
    Assignee: TDK Corporation
    Inventors: Yuichi Kubota, Michio Arai
  • Publication number: 20020190329
    Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.
    Type: Application
    Filed: August 7, 2002
    Publication date: December 19, 2002
    Applicant: TDK Corporation and semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Yukio Yamaguchi
  • Publication number: 20020138897
    Abstract: A shield fixing structure in which convenience in shield fixing or removing operation is further improved while superior effect in the fixing structure is being assured. This fixing structure is set such that when the stopper is oppositely faced against the passing notch at its full-opened upper limit position, the holding part holds the state to enable a turning of the shield over the full-opened upper limit position of the shield.
    Type: Application
    Filed: November 13, 2001
    Publication date: October 3, 2002
    Inventor: Michio Arai
  • Patent number: 6452212
    Abstract: A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region.
    Type: Grant
    Filed: September 19, 1997
    Date of Patent: September 17, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mitsufumi Codama, Kazushi Sugiura, Yukio Yamauchi, Naoya Sakamoto, Michio Arai
  • Patent number: 6448580
    Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: September 10, 2002
    Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Yukio Yamauchi
  • Patent number: 6445126
    Abstract: An organic EL device has a hole injecting electrode (2), an electron injecting electrode (6), an organic layer participating in a light emitting function disposed between the electrodes. The organic layer includes a light emitting layer (4) comprising a conjugated polymer. The device further includes an inorganic insulative hole injecting layer (3) or an inorganic insulative electron injecting layer (5). The device can take advantage of both organic and inorganic materials, and has an improved efficiency, an extended effective life, and a low cost.
    Type: Grant
    Filed: June 25, 1999
    Date of Patent: September 3, 2002
    Assignee: TDK Corporation
    Inventors: Michio Arai, Osamu Onitsuka
  • Patent number: 6442766
    Abstract: A helmet with shield and having a shield supporting structure that reduces wind-noise, the shield being substantially flush with an outer surface of the helmet shell when fully closed. The shield is ascended or descended against slant surface segments when the shield is moved in a forward or a rearward direction as the supporting shaft is moved in a forward or a rearward direction and the shield is turned in an upward or a downward direction so as to cause the shield to be protruded out of or indented into the step segment.
    Type: Grant
    Filed: December 5, 2000
    Date of Patent: September 3, 2002
    Inventor: Michio Arai
  • Publication number: 20020113241
    Abstract: The invention aims to provide a light emitting device comprising a base material or protective member which has improved light transmittance, heat resistance, passivation (gas barrier, oligomer release prevention and minimized outgassing), anti-water or moisture-absorption, stability against chemical degradation, dimensional and shape stability, anti-surface-reflection, electrical insulation, UV degradation resistance, and weather resistance, and is highly productive due to possible film formation under atmospheric pressure, and hence, a light emitting device featuring high reliability, ease of manufacture and low cost.
    Type: Application
    Filed: March 25, 2002
    Publication date: August 22, 2002
    Applicant: TDK CORPORATION
    Inventors: Yuichi Kubota, Michio Arai
  • Publication number: 20020092087
    Abstract: A full-face helmet having a fundamental structure of the full-face helmet as well as a function of protection and showing an identification of face, convenience in use of it and a high visibility in field of view as formed in a half type, three-quarters type, or an open face type helmet. There is provided a full-face helmet for a motorcycle in which a chin guard integrally formed with the helmet is provided and the helmet has a shield that can be opened or closed, wherein a window hole opened at a front surface of a shell made of fiber reinforced resin material or thermoplastic resin material or the like is opened in a range in which a substantial entire face ranging from brows to the chin of the wearing person can be confirmed when the window hole is seen from an outside part of the front surface of the helmet under a state in which the head part of a wearing person is kept upright.
    Type: Application
    Filed: January 14, 2002
    Publication date: July 18, 2002
    Inventor: Michio Arai
  • Patent number: 6410960
    Abstract: A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.
    Type: Grant
    Filed: January 7, 1999
    Date of Patent: June 25, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Yukio Yamauchi, Naoya Sakamoto, Katsuto Nagano
  • Patent number: 6406802
    Abstract: An object of the invention is to provide an organic EL color display which can be fabricated easily and at low costs yet with high reliability. This object is achievable by the provision of an organic EL color display comprising a substrate and, in order from the substrate, a fluorescence converting layer containing a fluorescent material and/or a color filter, an organic layer, a barrier layer and an organic EL structure. The organic layer is formed of a thermosetting resin or an ultraviolet curing resin, and the barrier layer contains silicon oxide.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: June 18, 2002
    Assignee: TDK Corporation
    Inventors: Michio Arai, Hiroshi Yamamoto
  • Patent number: 6404126
    Abstract: An organic electroluminescent device having high efficiency, a long life time, and low cost, includes a substrate, a hole injecting electrode and an electron injecting electrode formed on the substrate, an organic material-containing organic layer between the electrodes, and an inorganic insulative electron injecting and transporting layer between the light emitting layer and the electron injecting electrode. The organic layer includes a light emitting layer containing a conjugated polymer, and the inorganic insulative electron injecting and transporting layer comprises three components. The first component is at least one oxide selected from the group consisting of lithium oxide, rubidium oxide, potassium oxide, sodium oxide, and cesium oxide. The second component is at least one of strontium oxide, magnesium oxide, and calcium oxide. The third component consists of silicon oxide, germanium oxide, or mixtures thereof.
    Type: Grant
    Filed: June 25, 1999
    Date of Patent: June 11, 2002
    Assignee: TDK Corporation
    Inventors: Michio Arai, Osamu Onitsuka
  • Patent number: 6399222
    Abstract: An organic EL device includes a substrate, an organic EL structure, and a barrier layer therebetween. The substrate is of alkali glass. The barrier layer is of silicon oxide. The device has advantages including retarded occurrence of dark spots, improved storage stability and durability, and reduced expense of manufacture.
    Type: Grant
    Filed: December 16, 1998
    Date of Patent: June 4, 2002
    Assignee: TDK Corporation
    Inventors: Michio Arai, Hiroshi Yamamoto
  • Patent number: 6373186
    Abstract: To realize an organic EL device having an excellent hole injection efficiency, improved luminous efficiency, low operating voltage, and low cost, the invention provides an organic EL device comprising a hole injecting electrode, an electron injecting electrode, and at least one organic layer between the electrodes, at least one of the organic layer having a light emitting function. The device further has a high resistance inorganic hole injecting layer between the hole injecting electrode and the organic layer. The high resistance inorganic hole injecting layer is capable of blocking electrons and has conduction paths for carrying holes.
    Type: Grant
    Filed: January 21, 1999
    Date of Patent: April 16, 2002
    Assignee: TDK Corporation
    Inventors: Michio Arai, Isamu Kobori, Etsuo Mitsuhashi