Patents by Inventor Michio Aruga
Michio Aruga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11687439Abstract: Automatic definition of windows for trace analysis. For each process step, the trace data are aligned to both the start of the process step and the end of the process step, and statistics including rate of change are calculated from both the start of the process step and the end of the process step. Windows are generated based on analysis of the calculated statistics.Type: GrantFiled: July 22, 2021Date of Patent: June 27, 2023Assignee: PDF Solutions, Inc.Inventors: Richard Burch, Kazuki Kunitoshi, Michio Aruga, Nobichika Akiya
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Publication number: 20220027248Abstract: Automatic definition of windows for trace analysis. For each process step, the trace data are aligned to both the start of the process step and the end of the process step, and statistics including rate of change are calculated from both the start of the process step and the end of the process step. Windows are generated based on analysis of the calculated statistics.Type: ApplicationFiled: July 22, 2021Publication date: January 27, 2022Applicant: PDF Solutions, Inc.Inventors: Richard Burch, Kazuki Kunitoshi, Michio Aruga, Nobichika Akiya
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Publication number: 20080035754Abstract: Disclosed is a system for treating an object, comprising a section for positioning an object on which the object to be treated is positioned under a predetermined atmosphere; a nozzle section for spraying the object with supplied vapor and water in mixture; means for moving the section for positioning an object and/or the nozzle section for allowing the nozzle section to spray the object on the section for positioning an object; means for controlling positional relationship between the section for positioning an object and the nozzle section to control relative rate (scan rate); and means for controlling, during the spraying, each of parameters of pressure of the vapor supplied to the nozzle section, flowrate of the water supplied to the nozzle section, area of an outlet of the nozzle section, spray time, scan rate and gap between the outlet of the nozzle section and the object.Type: ApplicationFiled: July 21, 2005Publication date: February 14, 2008Applicant: AQUA SCIENCE CORPORATIONInventors: Michio Aruga, Koichi Saito, Kaori Tajima
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Patent number: 7036453Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.Type: GrantFiled: September 8, 2003Date of Patent: May 2, 2006Assignee: Applied Materials, Inc.Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
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Publication number: 20040048492Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.Type: ApplicationFiled: September 8, 2003Publication date: March 11, 2004Applicant: Applied Materials, Inc.Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
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Patent number: 6660662Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.Type: GrantFiled: January 26, 2001Date of Patent: December 9, 2003Assignee: Applied Materials, Inc.Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
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Patent number: 6632726Abstract: To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O2 gas and SiH4 gas are introduced into the processing chamber. Bias RF power is then applied to a support member to cause permeation of a wafer W by the plasma. At the end of the film formation, the application of the bias RF power to the support member is stopped while the O2 gas and the SiH4 gas are kept introduced into the processing chamber. After that, the introduction of the SiH4 gas is stopped, and the introduction of the O2 gas is also stopped. Then, the application of the source RF power to the coil is stopped. This can reduce plasma damage to the substrate to be processed.Type: GrantFiled: August 29, 2001Date of Patent: October 14, 2003Assignee: Applied Materials, Inc.Inventors: Michio Aruga, Atsushi Tabata
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Publication number: 20030024901Abstract: A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.Type: ApplicationFiled: January 26, 2001Publication date: February 6, 2003Applicant: Applied Materials, Inc.Inventors: Tetsuya Ishikawa, Alexandros T. Demos, Seon-Mee Cho, Feng Gao, Kaveh F. Niazi, Michio Aruga
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Publication number: 20020028567Abstract: To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O2 gas and SiH4 gas are introduced into the processing chamber. Bias RF power is then applied to a support member to cause permeation of a wafer W by the plasma. At the end of the film formation, the application of the bias RF power to the support member is stopped while the O2 gas and the SiH4 gas are kept introduced into the processing chamber. After that, the introduction of the SiH4 gas is stopped, and the introduction of the O2 gas is also stopped. Then, the application of the source RF power to the coil is stopped. This can reduce plasma damage to the substrate to be processed.Type: ApplicationFiled: August 29, 2001Publication date: March 7, 2002Applicant: Applied Materials Inc.Inventors: Michio Aruga, Atsushi Tabata
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Patent number: 6090706Abstract: A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.Type: GrantFiled: August 26, 1998Date of Patent: July 18, 2000Assignee: Applied Materials, Inc.Inventors: Susan Weiher Telford, Michio Aruga, Mei Chang
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Patent number: 5997950Abstract: A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl.sub.2 H.sub.2 and (ii) tungsten source gas, such as WF.sub.6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSi.sub.x layer on the substrate, so that the tungsten to silicon ratio of the WSi.sub.x layer is substantially uniform through the thickness of the WSi.sub.x film. An apparatus for performing the process is also described.Type: GrantFiled: May 27, 1997Date of Patent: December 7, 1999Assignee: Applied Materials, Inc.Inventors: Susan G. Telford, Meng Chu Tseng, Michio Aruga, Klaus-Dieter Rinnen
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Patent number: 5877086Abstract: The present invention is a process for planarization of substrate layers comprising apertures to form continuous, void-free contacts or vias in sub-half micron applications. A CVD silicon or metal silicide wetting layer is deposited onto the substrate layer comprising apertures to provide a conformal wetting layer for a PVD metal layer. The PVD metal layer is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The CVD layer diffuses into the PVD layer and the resulting conductive layer is substantially void-free. The planarization process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of vias and contacts occurs without the formation of an oxide layer over the CVD wetting layer.Type: GrantFiled: July 11, 1997Date of Patent: March 2, 1999Assignee: Applied Materials, Inc.Inventor: Michio Aruga
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Patent number: 5779848Abstract: An improved integrated circuit processing apparatus is disclosed wherein a protective coating of aluminum nitride (AlN), on the inner surface of a quartz (SiO.sub.2) window in the wall of the integrated circuit processing apparatus provides an enhanced resistance to the corrosive effects of halogen-containing reagents, particularly fluorine-containing gases, on the protected inner surface of the quartz window. Formation of an AlN coating having a minimum thickness of about 1 micron up to a maximum thickness of about 15 microns with a coating uniformity of .+-.15% of the average coating thickness, provides the desired protection of the inner surface of the quartz window from corrosive attack by fluorine-containing gases, such as NF.sub.3, SF.sub.6, and fluorine-containing hydrocarbons, e.g., C.sub.2 F.sub.6.Type: GrantFiled: January 10, 1997Date of Patent: July 14, 1998Assignee: Applied Materials, Inc.Inventor: Michio Aruga
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Patent number: 5688331Abstract: In CVD processes susceptors can be made of a thermally conductive ceramic such as aluminum nitride which has superior durability with respect to fluorine plasma. Such aluminum nitride susceptors can include an embedded heater element and/or embedded ground or RF electrodes which as a result of their embedment are protected from the deleterious effects of the processing chamber environment. The conductors leading to these elements are protected from exposure to the process chamber environment by passing through a cylindrical member filled with inert gas supporting the wafer support plate of said susceptor. Alternately, the conductors leading to these elements can be run through passages in a hermetically sealed stem supporting the susceptor wafer support plate. The stem passes through the wall of the processing chamber so that connections to the susceptor wafer support plate can be made outside the processing chamber.Type: GrantFiled: July 1, 1996Date of Patent: November 18, 1997Assignee: Applied Materisls, Inc.Inventors: Michio Aruga, Atsunobu Ohkura, Akihiko Saito, Kenji Suzuki, Kenichi Taguchi, Dale Robert DuBois, Alan Ferris Morrison
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Patent number: 5643633Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.Type: GrantFiled: June 7, 1995Date of Patent: July 1, 1997Assignee: Applied Materials, Inc.Inventors: Susan G. Telford, Meng Chu Tseng, Michio Aruga, Moshe Eizenberg
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Patent number: 5558910Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.Type: GrantFiled: June 7, 1995Date of Patent: September 24, 1996Assignee: Applied Materials, Inc.Inventors: Susan G. Telford, Meng C. Tseng, Michio Aruga, Moshe Eizenberg
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Patent number: 5510297Abstract: Disclosed is a process for the formation of a tungsten silicide layer on an integrated circuit structure of a semiconductor wafer mounted on a susceptor in a vacuum chamber, wherein the tungsten silicide layer is applied at a temperature of at least 500.degree. C. and the susceptor has an aluminum nitride surface. After the chamber has been cleaned with one or more fluorine-containing etchant gases, the improvement comprises depositing a layer of tungsten silicide on the surface of the susceptor prior to an initial deposition of tungsten silicide on a wafer mounted on the susceptor after cleaning with the fluorine-containing etchant gases.Type: GrantFiled: August 10, 1995Date of Patent: April 23, 1996Assignee: Applied Materials, Inc.Inventors: Susan Telford, Michio Aruga, Mei Chang
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Patent number: 5500249Abstract: A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.Type: GrantFiled: May 18, 1993Date of Patent: March 19, 1996Assignee: Applied Materials, Inc.Inventors: Susan G. Telford, Meng C. Tseng, Michio Aruga
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Patent number: 5482749Abstract: A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on substrates in the chamber, which first comprises treating the aluminum-bearing surfaces with a mixture of silane and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the aluminum-bearing surfaces. In a preferred embodiment, the process further comprises subsequently treating the already coated aluminum-bearing surfaces of the chamber in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited silane-based tungsten silicide.Type: GrantFiled: December 23, 1994Date of Patent: January 9, 1996Assignee: Applied Materials, Inc.Inventors: Susan Telford, Michio Aruga, Mei Chang
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Patent number: 5456757Abstract: A novel susceptor used in a chemical vapor deposition device that is made of a ceramic material, specifically, an aluminum nitride material.Type: GrantFiled: October 29, 1993Date of Patent: October 10, 1995Assignee: Applied Materials, Inc.Inventors: Michio Aruga, Atsunobu Ohkuba, Akihiko Saito, Katsumasa Anan