Abstract: A plasma processing apparatus includes: a processing container; a substrate holding unit that disposes a plurality of substrates in multiple tiers and is inserted into the processing container; a rotary shaft that rotates the substrate holding unit; a gas supply unit that supplies a processing gas into the processing container; an exhaust unit that exhausts the inside of the processing container; a plurality of electrodes disposed on the outer side of the processing container and arranged in the circumferential direction of the processing container; and a radio-frequency power supply that applies a radio-frequency power to the plurality of electrodes, thereby generating capacitively coupled plasma in the processing container.

Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

Abstract: A gas distribution device includes a plurality of supply lines, a branch unit and a variation suppression unit. The supply lines are respectively connected to a plurality of processing chambers. The branch unit is configured to distribute a gas supplied from a gas supply source to the supply lines. The variation suppression unit is provided between the branch unit and the gas supply source and configured to supply the gas from the gas supply source to the branch unit and suppress variation in flow rates of the gas distributed by the branch unit between the supply lines.

Abstract: Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: A gas distribution device includes a plurality of supply lines, a branch unit and a variation suppression unit. The supply lines are respectively connected to a plurality of processing chambers. The branch unit is configured to distribute a gas supplied from a gas supply source to the supply lines. The variation suppression unit is provided between the branch unit and the gas supply source and configured to supply the gas from the gas supply source to the branch unit and suppress variation in flow rates of the gas distributed by the branch unit between the supply lines.

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract: A method of selectively forming a thin film on a substrate to be processed in which a conductive film and an insulating film are exposed to a surface of the substrate includes: selectively forming a first Ru film only on a first surface, which is an exposed surface of the conductive film and formed of one of Ru, RuO2, Pt, Pd, CuO, and CuO2, using an Ru(EtCp)2 gas and an O2 gas; and selectively forming a first SiO2-containing insulating film only on a second surface, which is an exposed surface of the insulating film has OH groups, by performing one or more times a process of supplying a TMA gas to the substrate to adsorb TMA only to the second surface and a process of forming an SiO2 film only on a surface of the adsorbed TMA using a silanol group-containing silicon raw material and an oxidizing agent.

Abstract: Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber; a microwave-transmitting plate made of a dielectric material that constitutes a top wall of the chamber and transmits the microwaves radiated from the plurality of slots; a gas supply mechanism that supplies a gas into the chamber; and an exhaust mechanism that exhausts an atmosphere in the chamber. The planar antenna includes a plurality of slot groups each forming one unit including one or more of the slots, and the slots are formed so as to form an odd number of the slot groups equal to or more than three in a circumferential direction.

Abstract: A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.

Abstract: Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.

Abstract: A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion.

Abstract: Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. A lower end portion of an inner conductor of the coaxial waveguide has a tapered shape of which a diameter increases downwardly, the slow wave plate has an annular shape in a plan view, and the inner surface of the slow wave plate encloses the lower end portion of the inner conductor and is located more outside than an inner surface of an outer conductor of the coaxial waveguide in a radial direction.

Abstract: Disclosed is a plasma processing apparatus including: a processing container that includes a bottom portion and a sidewall and defines a processing space; a microwave generator that generates microwaves; and a dielectric window attached to the sidewall of the processing container. The dielectric window is supported by a support surface formed in an upper end portion of the sidewall or a support surface formed in a conductor member disposed in the upper end portion of the sidewall, and includes a non-facing portion that does not face the processing space. Corner portions are formed on surfaces of the non-facing portion to fix a position of a node of standing waves. A distance from a sidewall corner portion to at least one of the plurality of corner portions is a distance in which a position of another node of the standing waves overlaps with a position of the sidewall corner portion.

Abstract: A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: Disclosed is a plasma processing apparatus including a processing container, a placing table, a central introduction section, and a peripheral introduction section. The central introduction section is provided above the placing table. The central introduction introduces a gas toward the placing table along the axis passing through a center of the placing table. The peripheral introduction section is provided between the central introduction section and a top surface of the placing table in a height direction. In addition, the peripheral introduction section is formed along a side wall. The peripheral introduction section provides a plurality of gas ejection ports arranged in a circumferential direction with respect to the axis. The plurality of gas ejection ports of the peripheral introduction section extend away from the placing table as the gas ejection ports come close to the axis.