Patents by Inventor Mihoko Hirao

Mihoko Hirao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device
    Patent number: 9834859
    Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: December 5, 2017
    Assignee: OSAKA UNIVERSITY
    Inventors: Yusuke Mori, Mamoru Imade, Masashi Yoshimura, Mihoko Hirao, Masayuki Imanishi
  • Target substance transfer method, crystal production method, composition production method, and target substance transfer device
    Patent number: 9751068
    Abstract: The present invention provides a target substance transfer method, a crystal production method, a composition production method, and a target substance transfer device, which allow the concentration of a target substance to be increased easily and effectively. The target substance transfer method is a method for transferring a target substance 103 from a first phase 101 that is a liquid or solid phase containing the target substance 103 to a second phase 102 including: a phase approximation step of bringing the first phase 101 and the second phase 102 into close proximity; and a bubble collapse step of forming bubbles in the vicinity of a boundary between the first phase 101 and the second phase 102 and then causing the bubbles to collapse.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: September 5, 2017
    Assignee: Osaka University
    Inventors: Yusuke Mori, Tsuyoshi Inoue, Kazufumi Takano, Hiroyoshi Matsumura, Hiroaki Adachi, Shigeru Sugiyama, Ryota Murai, Masateru Kurata, Hiroshi Yoshikawa, Mihoko Hirao, Satoshi Nakayama, Yoshinori Takahashi, Satoshi Murakami
  • METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE
    Publication number: 20140328742
    Abstract: The present invention provides a method for producing a Group III nitride crystal, capable of producing a Group III nitride crystal in a large size with few defects and high quality.
    Type: Application
    Filed: January 10, 2013
    Publication date: November 6, 2014
    Inventors: Yusuke Mori, Mamoru Imade, Masashi Yoshimura, Mihoko Hirao, Masayuki Imanishi
  • TARGET SUBSTANCE TRANSFER METHOD, CRYSTAL PRODUCTION METHOD, COMPOSITION PRODUCTION METHOD, AND TARGET SUBSTANCE TRANSFER DEVICE
    Publication number: 20130299099
    Abstract: The present invention provides a target substance transfer method, a crystal production method, a composition production method, and a target substance transfer device, which allow the concentration of a target substance to be increased easily and effectively. The target substance transfer method is a method for transferring a target substance 103 from a first phase 101 that is a liquid or solid phase containing the target substance 103 to a second phase 102 including: a phase approximation step of bringing the first phase 101 and the second phase 102 into close proximity; and a bubble collapse step of forming bubbles in the vicinity of a boundary between the first phase 101 and the second phase 102 and then causing the bubbles to collapse.
    Type: Application
    Filed: January 18, 2012
    Publication date: November 14, 2013
    Applicant: OSAKA UNIVERSITY
    Inventors: Yusuke Mori, Tsuyoshi Inoue, Kazufumi Takano, Hiroyoshi Matsumura, Hiroaki Adachi, Shigeru Sugiyama, Ryota Murai, Masateru Kurata, Hiroshi Yoshikawa, Mihoko Hirao, Satoshi Nakayama, Yoshinori Takahashi, Satoshi Murakami
  • Data storage device
    Publication number: 20010007520
    Abstract: Provided are novel data storage devices, such as hard disk apparatuses. The devices include a clean chamber accommodating a component formed from a free cutting stainless steel. The free cutting stainless steel has a sulfur (S) content of not less than 0.25 percent by mass and a manganese-to-sulfur content ratio (Mn/S) of not greater than 1.8. The free cutting stainless steel has been subjected to: (1) an acid cleaning; (2) to a passivation treatment; (3) to a degreasing treatment and to a subsequent rust-removing, descaling chemical treatment; or (5) to a degreasing treatment and to a subsequent chromate treatment.
    Type: Application
    Filed: January 30, 2001
    Publication date: July 12, 2001
    Inventors: Hiroshi Matsumoto, Mihoko Hirao
  • Data storage device
    Patent number: 6215615
    Abstract: Provided are novel data storage devices, such as hard disk apparatuses. The devices include a clean chamber accommodating a component formed from a free cutting stainless steel. The free cutting stainless steel has a sulfur (S) content of not less than 0.25 percent by mass and a manganese-to-sulfur content ratio (Mn/S) of not greater than 1.8. The free cutting stainless steel has been subjected to: (1) an acid cleaning; (2) to a passivation treatment; (3) to a degreasing treatment and to a subsequent rust-removing, descaling chemical treatment; or (5) to a degreasing treatment and to a subsequent chromate treatment.
    Type: Grant
    Filed: November 30, 1998
    Date of Patent: April 10, 2001
    Assignee: Nidec Corporation
    Inventors: Hiroshi Matsumoto, Mihoko Hirao