Patents by Inventor Miin-Jang Cheng

Miin-Jang Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming dielectric films using a plurality of oxidation gases
    Patent number: 8946036
    Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: February 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Cheng, Keng-Ham Lin
  • METHOD OF FORMING DIELECTRIC FILMS USING A PLURALITY OF OXIDATION GASES
    Publication number: 20140162425
    Abstract: A method for forming a dielectric film is disclosed. The method includes (a) exposing a substrate to a first gas pulse having a first oxygen-containing gas in a chamber; (b) exposing the substrate to multiple consecutive second gas pulses having a second oxygen-containing gas in the chamber, wherein the first oxygen-containing gas is different from the second oxygen-containing gas; and (c) sequentially after (a) and (b), exposing the substrate to a third gas pulse having a metal-containing gas in the chamber. Steps (a), (b), and (c) may be repeated any number of times to form the dielectric film with a predetermined thickness.
    Type: Application
    Filed: December 7, 2012
    Publication date: June 12, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Liang-Chen Chi, Chia-Ming Tsai, Yu-Min Chang, Chin-Kun Wang, Miin-Jang Cheng, Keng-Ham Lin