Patents by Inventor Mika Gamo
Mika Gamo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8893645Abstract: An apparatus for synthesizing highly oriented, aligned carbon nanotubes from an alcohol includes a liquid tank for retaining an alcohol; a water cooling device for cooling the liquid tank from its outside; a condensing device for cooling and condensing vapor from the alcohol; a substrate holding device having an electrode for passing an electric current through the substrate in the alcohol; an inert gas inlet for removing air; a tank sealing device to prevent the alcohol becoming gaseous in phase; and a temperature measuring device, wherein the Si substrate with a buildup thereon of the thin film or insular particles is heated by electric current to a temperature, thereby providing a temperature gradient from the Si substrate surface toward the alcohol, wherein said thin film or insular particles is a catalyst for synthesizing carbon nanotubes, and the carbon nanotubes are synthesized.Type: GrantFiled: April 1, 2009Date of Patent: November 25, 2014Assignees: Japan Science and Technology Agency, National Institute for Materials ScienceInventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Patent number: 8557213Abstract: A novel carbon nanotube (64) is featured in that it has the highest Raman scattering intensity in the vicinity of 1580 cm?1 in its Raman spectrum. Carbon nanotubes can be grown on and from the catalytic fine particles (63) which consist of ultra-fine particles of cobalt oxide catalyst onto a substrate comprising a conductive substrate (62) and fine particles (63) of catalyst formed on a surface thereof. An electron emission device (60) so configured as to emit electrons by applying a voltage to apical ends (64a) of such carbon nanotubes (64) can be reduced in driving voltage and can achieve a current such as to emit a fluorescent material on the market for low-velocity electron beams. The electron emission device (60) needs no gate and can thus simplify the structure and reduce the cost of a surface light-emitting device for which the element is used.Type: GrantFiled: November 24, 2006Date of Patent: October 15, 2013Assignees: National Institute for Materials Science, Toppan Printing Co., Ltd.Inventors: Toshihiro Ando, Kiyoharu Nakagawa, Mika Gamo, Hidenori Gamo
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Patent number: 7879309Abstract: A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).Type: GrantFiled: March 3, 2010Date of Patent: February 1, 2011Assignee: Japan Science and Technology AgencyInventors: Tadashi Mitsui, Takashi Sekiguchi, Mika Gamo, Yafei Zhang, Toshihiro Ando
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Patent number: 7771697Abstract: A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).Type: GrantFiled: November 12, 2002Date of Patent: August 10, 2010Assignee: Japan Science and Technology AgencyInventors: Tadashi Mitsui, Takashi Sekiguchi, Mika Gamo, Yafei Zhang, Toshihiro Ando
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Publication number: 20100183494Abstract: A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).Type: ApplicationFiled: March 3, 2010Publication date: July 22, 2010Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCYInventors: Tadashi MITSUI, Takashi SEKIGUCHI, Mika GAMO, Yafei ZHANG, Toshihiro ANDO
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Publication number: 20100171409Abstract: A novel carbon nanotube (64) is featured in that it has the highest Raman scattering intensity in the vicinity of 1580 cm?1 in its Raman spectrum. Carbon nanotubes can be grown on and from the catalytic fine particles (63) which consist of ultra-fine particles of cobalt oxide catalyst onto a substrate comprising a conductive substrate (62) and fine particles (63) of catalyst formed on a surface thereof. An electron emission device (60) so configured as to emit electrons by applying a voltage to apical ends (64a) of such carbon nanotubes (64) can be reduced in driving voltage and can achieve a current such as to emit a fluorescent material on the market for low-velocity electron beams. The electron emission device (60) needs no gate and can thus simplify the structure and reduce the cost of a surface light-emitting device for which the element is used.Type: ApplicationFiled: November 24, 2006Publication date: July 8, 2010Inventors: Toshihiro Ando, Kiyoharu Nakagawa, Mika Gamo, Hidenori Gamo
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Publication number: 20100124526Abstract: A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate (3) having the buildup to a hydrogen plasma; and heating the substrate (3) exposed to the hydrogen plasma in the organic liquid (10) to a predetermined temperature.Type: ApplicationFiled: April 1, 2009Publication date: May 20, 2010Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Patent number: 7608331Abstract: A fine spherical particle formed of diamond as a core and having carbon nano-materials radially grown therefrom is disclosed, which exhibits the appearance of a Marimo (Cladophora sauteri) particle. Fine diamond catalytic particles 2 whose surfaces are oxidized and treated to carry a transition metal catalyst are floated and stirred in a gas phase of hydrocarbon while being heated at a selected temperature to bring about a catalytic reaction which synthesizes carbon nano-materials and to grow them on the surface of said oxidized fine diamond particle. Nano fibers or filaments 32 of a nano size are grown from the fine diamond catalytic particle 31 as a core to form cladophora-form carbon. The carbon nano-materials if the supported transition metal is Ni or Co become carbon nano-tubes and if it is Pd become coin stacked carbon nano-graphite.Type: GrantFiled: May 10, 2005Date of Patent: October 27, 2009Assignee: National Institute for Materials ScienceInventors: Toshihiro Ando, Kiyoharu Nakagawa, Mika Gamo, Hirokazu Oda
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Patent number: 7531156Abstract: A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate (3) having the buildup to a hydrogen plasma; and heating the substrate (3) exposed to the hydrogen plasma in the organic liquid (10) to a predetermined temperature.Type: GrantFiled: June 21, 2002Date of Patent: May 12, 2009Assignees: Japan Science and Technology Agency, National Institute for Materials ScienceInventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Patent number: 7521034Abstract: 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).Type: GrantFiled: January 3, 2007Date of Patent: April 21, 2009Assignees: Japan Science and Technology Agency, National Institute for Materials ScienceInventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Publication number: 20080193764Abstract: A fine spherical particle formed of diamond as a core and having carbon nano-materials radially grown therefrom is disclosed, which exhibits the appearance of a Marimo (Cladophora sauteri) particle. Fine diamond catalytic particles 2 whose surfaces are oxidized and treated to carry a transition metal catalyst are floated and stirred in a gas phase of hydrocarbon while being heated at a selected temperature to bring about a catalytic reaction which synthesizes carbon nano-materials and to grow them on the surface of said oxidized fine diamond particle. Nano fibers or filaments 32 of a nano size are grown from the fine diamond catalytic particle 31 as a core to form cladophora-form carbon. The carbon nano-materials if the supported transition metal is Ni or Co become carbon nano-tubes and if it is Pd become coin stacked carbon nano-graphite.Type: ApplicationFiled: May 10, 2005Publication date: August 14, 2008Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Toshihiro Ando, Kiyohara Nakagawa, Mika Gamo, Hirokazu Oda
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Patent number: 7364714Abstract: 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).Type: GrantFiled: June 21, 2002Date of Patent: April 29, 2008Assignees: Japan Science and Technology Agency, National Institute for Materials ScienceInventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Publication number: 20080003162Abstract: 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).Type: ApplicationFiled: January 3, 2007Publication date: January 3, 2008Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Patent number: 7063742Abstract: A substrate is polished and made an inclined substrate, which is exposed to a hydrogen plasma and is thereby smoothened. The substrate is then heated controlledly until it surface temperature reaches 830° C. Meanwhile, a gas mixture of 1% methane, 50 ppm hydrogen sulfide and hydrogen is introduced in a tubular reaction vessel to flow therethrough at 200 ml/min, where microwave plasma is excited to cause n-type semiconductor diamond to epitaxially grow on the substrate. An ion doped n-type semiconductor is thus formed that has a single donor level of an activation energy at 0.38 eV and is high in mobility and of high quality.Type: GrantFiled: March 27, 2000Date of Patent: June 20, 2006Assignee: Japan Science and Technology AgencyInventors: Toshihiro Ando, Yoichiro Sato, Eiji Yasu, Mika Gamo, Isao Sakaguchi
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Publication number: 20050089680Abstract: The present invention offers a synthesizing method of 3C—SiC: nanowhisker wherein its diameter anid length can be controlled, it can grow on Si substrate, and wherein said method is safe and its cost is low. and said whisker cart emit visible light of various wravelength. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma GVD apparaturi and by holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate 1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particle (3), whisker surface is terminated with H so to maintain the diameter constant, and the metal liquid particle (3) at whisker root takes in Si from Si substrate (1) and penetrates into Si substrate (1).Type: ApplicationFiled: June 21, 2002Publication date: April 28, 2005Inventors: Toshihiro Ando, Mika Gamo
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Publication number: 20050002849Abstract: A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).Type: ApplicationFiled: November 12, 2002Publication date: January 6, 2005Inventors: Tadashi Mitsui, Takashi Sekiguchi, Mika Gamo, Yafei Zhang, Toshihiro Ando
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Publication number: 20040151653Abstract: A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate (3) having the buildup to a hydrogen plasma; and heating the substrate (3) exposed to the hydrogen plasma in the organic liquid (10) to a predetermined temperature.Type: ApplicationFiled: December 23, 2003Publication date: August 5, 2004Inventors: Toshihiro Ando, Mika Gamo, Yafei Zhang
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Patent number: 5645923Abstract: A gas barrier laminated material comprising a substrate, and an inorganic compound thin-film layer and a protective layer which are laminated in this order, wherein the protective layer is a layer formed by coating on the inorganic compound thin-film layer a coating composition containing a metal alkoxide or a hydrolyzate thereof and an isocyanate compound having two or more isocyanate groups, followed by heat drying, or a layer formed by coating on the inorganic compound thin-film layer a water-based coating composition containing a water-soluble polymer and at least one of (a) a metal alkoxide or a hydrolyzate thereof and (b) a tin chloride, followed by heat drying.Type: GrantFiled: June 6, 1995Date of Patent: July 8, 1997Assignee: Toppan Printing Co., Ltd.Inventors: Ryukichi Matsuo, Toshiaki Yoshihara, Takashi Miyamoto, Mika Gamo
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Patent number: 5302208Abstract: The invention relates to a vacuum coating installation comprising a container (9) in which is disposed the material (10) to be vaporized, for example SiO. The vaporization of the material (10) herein takes place by means of an electron beam gun (11) or by means of a vaporization oven. Opposing the surface of the material to be vaporized (10) is provided a synthetic film (5) to be coated which is transported further by means of a transport arrangement (4, 6, 22 to 27). Into the space between the material (10) to be vaporized and the material (5) to be coated a microwave is irradiated from an horn antenna (13).Type: GrantFiled: August 3, 1992Date of Patent: April 12, 1994Assignees: Leybold Aktiengesellschaft, Toppan Printing Co., LtdInventors: Helmut Grimm, Thomas Krug, Andreas Meier, Klemens Ruebsam, Gerhard Steiniger, Mika Gamo, Mamoru Sekiguchi, Mitsuru Kano, Hiroyuki Yasujima, Takashi Miyamoto, Noboru Sasaki