Abstract: There is provided a technique that includes (a) a process chamber configured to accommodate a plurality of substrates arranged vertically, provided with a product region and a dummy region and including a main exhauster on a lateral side thereof, (b) a first injector extending vertically within the process chamber on an opposite side from the main exhauster, and configured to supply a first precursor toward the substrates accommodated in the product region and the dummy region, (c) at least one selected from the group of a second injector and a third injector, wherein the second injector supplies an assist gas for diluting the first precursor toward substrates and the third injector supplies an inert gas toward the substrates accommodated in the product region and the substrates accommodated in the dummy region; and (d) a fourth injector configured to supply an inert gas only to the dummy region.

Abstract: There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

Abstract: According to some embodiments of the present disclosure, there is provided a technique that includes: a process gas nozzle configured to supply a process gas into a process chamber; two or more inert gas nozzles installed at each of both sides of the process gas nozzle in a circumferential direction of the process chamber and configured to supply an inert gas into the process chamber; a process gas supplier configured to supply the process gas to the process gas nozzle; an inert gas supplier configured to supply the inert gas to each of the inert gas nozzles; and a controller configured to be capable of controlling a flow rate of the process gas supplied from the process gas supplier to the process gas nozzle and a flow rate of the inert gas supplied from the inert gas supplier to each of the inert gas nozzles, respectively.

Abstract: A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process gas supply mechanism configured to supply a process gas; a purge gas supply unit configured to supply a purge gas to a lower region of the process vessel via a gap between the insulating structure and the lid; and a restrictor disposed in the gap. The restrictor regulates flow of the purge gas such that the flow rate of the purge gas supplied to a first portion of the lower region of the process vessel is greater than a flow rate of the purge gas supplied to a second portion of the lower region of the process vessel.

Abstract: A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process gas supply mechanism configured to supply a process gas; a purge gas supply unit configured to supply a purge gas to a lower region of the process vessel via a gap between the insulating structure and the lid; and a restrictor disposed in the gap. The restrictor regulates flow of the purge gas such that the flow rate of the purge gas supplied to a first portion of the lower region of the process vessel is greater than a flow rate of the purge gas supplied to a second portion of the lower region of the process vessel.