Patents by Inventor Mikael Syväjärvi

Mikael Syväjärvi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing silicon carbide epitaxial layer
    Patent number: 7918937
    Abstract: A method of producing an epitaxial layer on a substrate of silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a thickness uniformity that is better than 5% at a growth rate which is at least 100 ?m/hour. The method comprises providing a cavity with a source material and a substrate of monolithic silicon carbide, evacuating the cavity and raising the temperature to 1400° C. Then the temperature is increased at a rate of about 20° C./min until a predetermined growth temperature is reached. Thereafter, the temperature is kept such that a predetermined growth rate between 10 ?m/min and 300 ?m/min is obtained.
    Type: Grant
    Filed: August 17, 2006
    Date of Patent: April 5, 2011
    Assignee: EL-Seed Corp.
    Inventors: Mikael Syväjärvi, Rositsa Yakimova