Patents by Inventor Mike Morse

Mike Morse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Microelectronic structure with a high germanium concentration silicon germanium alloy including a graded buffer layer
    Patent number: 7180147
    Abstract: A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: February 20, 2007
    Assignee: Intel Corporation
    Inventor: Mike Morse
  • Optical system with a high germanium concentration silicon germanium alloy including a graded buffer layer
    Patent number: 7180148
    Abstract: A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: February 20, 2007
    Assignee: Intel Corporation
    Inventor: Mike Morse
  • Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
    Patent number: 7122392
    Abstract: A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
    Type: Grant
    Filed: June 30, 2003
    Date of Patent: October 17, 2006
    Assignee: Intel Corporation
    Inventor: Mike Morse
  • Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
    Publication number: 20050136626
    Abstract: A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
    Type: Application
    Filed: January 12, 2005
    Publication date: June 23, 2005
    Inventor: Mike Morse
  • Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
    Publication number: 20050136566
    Abstract: A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
    Type: Application
    Filed: January 12, 2005
    Publication date: June 23, 2005
    Inventor: Mike Morse
  • Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
    Publication number: 20040266145
    Abstract: A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one dielectric region, and forming a low defect silicon germanium layer on at least one dielectric region.
    Type: Application
    Filed: June 30, 2003
    Publication date: December 30, 2004
    Inventor: Mike Morse