Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Abstract: A polymeric compound including a structural unit (a0) represented by general formula (a0-1) shown below and a polycyclic group-containing structural unit (a2m) other than the structural unit (a0), the structural unit (a2m) containing a lactone-containing polycyclic group, a —SO2-containing polycyclic group or a carbonate-containing polycyclic group, and a resist composition including the same: wherein R0 represents a hydrocarbon group of 1 to 6 carbon atoms which may have a substituent, or a hydrogen atom; Ya0 represents a single bond or a divalent linking group; L represents an ester bond; and Ra0 represents a polycyclic group having a bridged ring polycyclic skeleton or a condensed ring polycyclic skeleton, which has in its skeleton —C(?O)O— or —SO2—, and at least one of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component including a compound (B0-1) represented by general formula (b0) shown below in which Ra1 represents an aromatic ring; Ra01 represents an alkyl group of 5 or more carbon atoms optionally having a substituent; Ra02 and Ra03 each independently represents an alkyl group of 1 to 10 carbon atoms optionally having a substituent; n1 represents an integer of 1 to 5; n2 represents an integer of 0 to 2; n3 represents an integer of 0 to 4; and X? represents a counteranion.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra2 and Ra3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X? represents a counter anion.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component which exhibits changed solubility in a developing solution under action of acid and an acid-generator component including a compound (B0-1) represented by general formula (b0) shown below in which Ra1 represents an aromatic ring; Ra01 represents an alkyl group of 5 or more carbon atoms optionally having a substituent; Ra02 and Ra03 each independently represents an alkyl group of 1 to 10 carbon atoms optionally having a substituent; n1 represents an integer of 1 to 5; n2 represents an integer of 0 to 2; n3 represents an integer of 0 to 4; and X? represents a counteranion.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid. The composition includes a base material component whose solubility in a developing solution changes under the action of an acid; an acid generator component which generates an acid upon exposure; and a photo-reactive quencher which contains a compound represented by the general formula shown below: in which Ra1 represents an alkyl group having 1 to 10 carbon atoms which may have a substituent; and Ra2 and Ra3 each independently represent an alkyl group having 1 to 10 carbon atoms which may have a substituent. X? represents a counter anion.

Abstract: A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Abstract: A polymeric compound including a structural unit (a0) represented by general formula (a0-1) shown below and a polycyclic group-containing structural unit (a2m) other than the structural unit (a0), the structural unit (a2m) containing a lactone-containing polycyclic group, a —SO2-containing polycyclic group or a carbonate-containing polycyclic group, and a resist composition including the same: wherein R0 represents a hydrocarbon group of 1 to 6 carbon atoms which may have a substituent, or a hydrogen atom; Ya0 represents a single bond or a divalent linking group; L represents an ester bond; and Ra0 represents a polycyclic group having a bridged ring polycyclic skeleton or a condensed ring polycyclic skeleton, which has in its skeleton —C(?O)O— or —SO2—, and at least one of an alkyl group, an alkoxy group, a halogen atom and a halogenated alkyl group.