Abstract: Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.

Abstract: An electric wire with terminal includes an electric wire covering an outer periphery of a core wire with an insulating coating and a female terminal. The female terminal includes: a wire barrel having a bottom plate on which the core wire is placed and crimped onto the core wire; a groove portion extending from the bottom plate in a direction in which the core wire extends and whose surface on the side where the core wire is placed is bent into a concave shape. The groove portion has a water blocking wall molded by synthetic resin. The water blocking wall is provided to fill the inside of the groove portion. A region extending from the water blocking wall to the end of the insulating coating is covered with a water blocking coating, and the inner surface of the water blocking coating is in close contact with the water blocking wall.

Abstract: An electric wire with terminal includes an electric wire covering an outer periphery of a core wire with an insulating coating and a female terminal. The female terminal includes: a wire barrel having a bottom plate on which the core wire is placed and crimped onto the core wire; a groove portion extending from the bottom plate in a direction in which the core wire extends and whose surface on the side where the core wire is placed is bent into a concave shape. The groove portion has a water blocking wall molded by synthetic resin. The water blocking wall is provided to fill the inside of the groove portion. A region extending from the water blocking wall to the end of the insulating coating is covered with a water blocking coating, and the inner surface of the water blocking coating is in close contact with the water blocking wall.

Abstract: Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.