Abstract: The present invention has an object to provide a cold cathode field-emission electron gun with low aberration, to thereby provide a high-brightness electron gun even in the case of a large current. The present invention provides a field-emission electron gun which extracts an electron beam from a cathode and converges the extracted electron beam, the field-emission electron gun including: a magnetic field lens which is provided such that the cathode is disposed inside of a magnetic field of the lens; and an extraction electrode for extracting electrons from the cathode, the extraction electrode being formed into a cylindrical shape without an aperture structure. The present invention can provide an electron gun having a function of converging an electron beam using a magnetic field, the electron gun which is capable of reducing an incidental electrostatic lens action and has small aberration and high brightness.

Abstract: The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.

Abstract: In an electron microscope having a magnetic field immersion type cold-FE electron gun, the electron gun and the electron microscope are provided with high observation efficiency and the focal distance of the electron gun does not change during use. The degree of vacuum in the electron gun is improved with a getter pump for stabilization. Further, observation efficiency is improved by cleaning the electron source periodically and returning to recorded optical conditions on the occasion.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: The present invention has an object to provide a cold cathode field-emission electron gun with low aberration, to thereby provide a high-brightness electron gun even in the case of a large current. The present invention provides a field-emission electron gun which extracts an electron beam from a cathode and converges the extracted electron beam, the field-emission electron gun including: a magnetic field lens which is provided such that the cathode is disposed inside of a magnetic field of the lens; and an extraction electrode for extracting electrons from the cathode, the extraction electrode being formed into a cylindrical shape without an aperture structure. The present invention can provide an electron gun having a function of converging an electron beam using a magnetic field, the electron gun which is capable of reducing an incidental electrostatic lens action and has small aberration and high brightness.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.

Abstract: In a beam irradiation device of the present invention, laser beams emitted from a semiconductor laser impinge on an irradiation lens supported by a lens actuator. The laser beams that have passed through the irradiation lens change in outgoing angle in the direction of a y-z plane as the lens actuator is driven. A laser beam scan in the target region is thus performed. A part of the laser beams that have passed through the irradiation lens is reflected and separated by a beam splitter. The separated beams are converged on a PSD through a converging lens. A DSP control circuit monitors a scan position of the laser beams that have passed through the irradiation lens based on a signal from the PSD. When an irradiation position has deviated from a scan trajectory, the DSP control circuit controls an actuator driving circuit to draw the irradiation position back onto the scan trajectory. This beam irradiation device can realize a smooth and stable beam scan operation with a simple construction.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.

Abstract: In a beam irradiation device of the present invention, laser beams emitted from a semiconductor laser impinge on an irradiation lens supported by a lens actuator. The laser beams that have passed through the irradiation lens change in outgoing angle in the direction of a y-z plane as the lens actuator is driven. A laser beam scan in the target region is thus performed. A part of the laser beams that have passed through the irradiation lens is reflected and separated by a beam splitter. The separated beams are converged on a PSD through a converging lens. A DSP control circuit monitors a scan position of the laser beams that have passed through the irradiation lens based on a signal from the PSD. When an irradiation position has deviated from a scan trajectory, the DSP control circuit controls an actuator driving circuit to draw the irradiation position back onto the scan trajectory. This beam irradiation device can realize a smooth and stable beam scan operation with a simple construction.

Abstract: A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract: A scanning transmission electron microscope (STEM) has an electron source for generating a primary electron beam and an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination. An electron deflecting system is provided for scanning the specimen with the primary electron beam. The STEM also has a scattered electron detector for detecting scattered electrons transmitted through the specimen. A projection lens system projects the scattered electrons onto a detection surface of the scattered electron detector. An image displaying device displays the scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector. A detection angle changing device for establishes the range of the scattering angle of the scattered electrons detected by the scattered electron detector.