Abstract: Provided is substrate processing apparatus including processing chamber that dries substrate W using high temperature and high pressure fluid, raw material accommodating unit that accommodates raw material in liquid state, and supplying unit that supplies the high temperature and high pressure fluid to the processing chamber. The supplying unit includes sealable outer vessel connected to the processing chamber and the raw material accommodating unit, and inner vessel provided within the outer vessel and configured to receive the raw material. The inner vessel is provided with opened holes portions configured to drop down the raw material toward a portion of the outer vessel to be heated. After the raw material is accommodated in the inner vessel, the raw material is contacted with the portion to be heated and then heated. A high temperature and high pressure fluid is then obtained and supplied to the processing chamber.

Abstract: Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Abstract: Disclosed is a substrate processing apparatus which can inhibit the occurrence of spots, such as watermarks, by reducing the remaining of the liquid that has been used for liquid treatment, inhibit the turn-over of the wafer, and improve throughput. In the disclosed substrate processing apparatus including a carrying means for carrying a semiconductor wafer W while vertically holding the wafer, a wafer boat (a carrying means) includes lower holders holding the bottom portion of the wafer, and a couple of left/right upper holders for holding the bottom outer edges of the wafer when the wafer is turned over. The lower holder includes a holding groove part and a turn-over prevention groove part, which are integrally formed with each other.

Abstract: Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Abstract: Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Abstract: Provided is a processing apparatus for performing a processing of a substrate to be processed using a high-pressure fluid to prevent the generation of particles and ensure airtightness in the processing container. A sealing member is installed to surround a carrying port of the processing chamber, the carrying port is closed by the cover, and the cover is restricted from retreating by the pressure in the processing chamber by a lock plate, thereby processing the wafer in the processing chamber using the high-pressure fluid. Since the sealing member is pressurized by the internal atmosphere of the processing chamber to be pressed toward the cover during the drying process, a gap between the cover and the processing chamber may be airtightly closed. Since the sealing member does not slide with respect to the processing chamber or the cover, the generation of particles is suppressed.

Abstract: Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Abstract: A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.

Abstract: Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

Abstract: A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.

Abstract: A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.

Abstract: Disclosed is a substrate processing apparatus which can inhibit the occurrence of spots, such as watermarks, by reducing the remaining of the liquid that has been used for liquid treatment, inhibit the turn-over of the wafer, and improve throughput. In the disclosed substrate processing apparatus including a carrying means for carrying a semiconductor wafer W while vertically holding the wafer, a wafer boat (a carrying means) includes lower holders holding the bottom portion of the wafer, and a couple of left/right upper holders for holding the bottom outer edges of the wafer when the wafer is turned over. The lower holder includes a holding groove part and a turn-over prevention groove part, which are integrally formed with each other.

Abstract: Disclosed are an evaporator, an evaporation method, and a substrate processing apparatus, which can increase the concentration of generated vapor of an organic solvent and efficiently heat the organic solvent. The evaporator includes a fluid tube, a liquid organic solvent supply device for supplying the organic solvent liquid to one end of the fluid tube, and heating units for heating the fluid tube. The fluid tube has a cross section that increases from the one end to the other end. When the organic solvent liquid supplied to one end of the fluid tube is heated, the organic solvent vapor is discharged from the other end of the fluid tube. The substrate processing apparatus includes the above-described evaporator.

Abstract: A vapor drying apparatus comprises a processing chamber 1a adapted to contain semiconductor wafers W; a supply nozzle 2 adapted to supply IPA vapor or N2 gas into the processing chamber 1a; a two-fluid nozzle 3 connected to both of an IPA supply source 8 and an N2 gas supply source 5 and adapted to produce a mixed fluid of IPA and N2 gas; a vapor generating apparatus 10 adapted to produce IPA vapor by heating the mixed fluid produced by the two-fluid nozzle 3; an N2 gas supply line 23 connected to the upstream side of the two-fluid nozzle 3; and a mixed fluid supply line 22 connected to the downstream side of the two-fluid nozzle 3. An open-and-close valve V2 is provided on a branch line 25 connecting the N2 gas supply line 23 and the mixed fluid supply line 22.

Abstract: Disclosed is a fluid heating apparatus including a halogen lamp 23, and a tubular structure 26 surrounding the heating lamp and having a fluid inlet 24 and a fluid outlet 25. The tubular structure 26 comprises plural straight pipes 26a arrayed circumferentially around the halogen lamp 26, with adjacent straight pipes 26a being in contact with each other, or being slightly spaced from each other. At least the surfaces, facing the halogen lamp 26, of the straight pipes 26a are coated with a black paint 27, or a radiant-light-absorbing paint.

Abstract: A screen mask includes a screen mesh with a tensioning force of 196 to 392 N/mm; a tension mesh with a tensioning force of 49 to 98 N/mm; a resin plate (fixing part) arranged so as to surround the outer periphery of the screen mesh for fixing a part of the tension mesh with a tensioning force of 392 to 980 N/mm; and a screen frame. A length Ls of the screen mesh in a first direction intersecting a direction in which a squeegee squeegees on the screen mesh when performing a screen printing is 0.6 to 0.9 times a length Lt of the tension mesh in the first direction, a length Lk of the resin plate, the length Ls, and the length Lt in the first direction satisfy a relationship Lk=a(Lt+Ls)/2, where “a” is a coefficient in a range of 0.5 to 1.2.

Abstract: A screen mask includes a screen mesh with a tensioning force of 196 to 392 N/mm; a tension mesh with a tensioning force of 49 to 98 N/mm; a resin plate (fixing part) arranged so as to surround the outer periphery of the screen mesh for fixing a part of the tension mesh with a tensioning force of 392 to 980 N/mm; and a screen frame. A length Ls of the screen mesh in a first direction intersecting a direction in which a squeegee squeegees on the screen mesh when performing a screen printing is 0.6 to 0.9 times a length Lt of the tension mesh in the first direction, a length Lk of the resin plate, the length Ls, and the length Lt in the first direction satisfy a relationship Lk=a(Lt+Ls)/2, where “a” is a coefficient in a range of 0.5 to 1.2.

Abstract: The invention provides a technique which can improve a printing precision of a screen printing. A fixing mechanism for fixing a screen mask of a printer to a mask holder is structured such as to include a first fixing mechanism fixing sides of four sides of a frame existing in an outer peripheral edge of the screen mask arranged along an arrow corresponding to a sliding direction of a squeegee, and the mask holder, and a second fixing mechanism fixing a side of four sides of the frame arranged along a direction intersecting the arrow and in an opposite direction to the arrow as seen from the slide starting position, and the mask holder.

Abstract: A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.

Abstract: A technique which enables screen printing on a large printed object is provided. A screen frame of a screen mask has a lower surface (third surface), a screen-mesh holding unit which holds a screen mesh, a surface (fourth surface) which is different from the lower surface, and a screen-frame fixing unit which is fixed in a state in which a first contact region which is a part or the entirety of the surface is in contact with a screen-frame holder of a printing device. The position of the first contact region in a cross section of the screen frame cut from the upper surface toward the lower surface is present above the lower surface.