Abstract: The display apparatus includes a plurality of light emitting device units each including: a light generating unit 11, 21, or 31; a wavelength conversion layer 12, 22, or 32 including a color conversion layer 13, 23, or 33 that includes a particulate color conversion material; and a first light emitting device 10, a second light emitting device 20, or a third light emitting device 30 including a wavelength selection layer 14, 24, or 34. The wavelength of light emitted from the third wavelength selection layer 34 is longer than the wavelength of light emitted from the second wavelength selection layer 24 and the wavelength of light emitted from the first wavelength selection layer 14. The wavelength of light emitted from the second wavelength selection layer 24 is longer than the wavelength of light emitted from the first wavelength selection layer 14.

Abstract: A light-emitting device according to one embodiment of the present disclosure includes: a reflective structure having a first surface and a second surface and having, on the first surface, an opening whose side surface is provided with a first reflective film; a semiconductor light-emitting element including a first conductivity-type layer, an active layer, and a second conductivity-type layer that are stacked, the opening of the reflective structure and the active layer being disposed to be opposed to each other; and a support member having a light-transmitting property and having a first surface and a second surface, the semiconductor light-emitting element being disposed on the first surface side, the reflective structure being disposed on the second surface side, the second surface being at least partially in contact with the first surface of the reflective structure.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: A movable body according to an embodiment of the present disclosure includes a vehicle body and an information display apparatus mounted on the vehicle body. The information display apparatus provided at the movable body includes a light projecting part that projects a luminous flux and a reflector that reflects the luminous flux from the light projecting part. The reflector includes a plurality of unit regions two-dimensionally arranged over a main surface. Each of the unit regions includes a plurality of reflecting surfaces two-dimensionally arranged, and splits a luminous flux entering the plurality of reflecting surfaces to perform reflection in a plurality of directions.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part. The semiconductor laser includes an electrode provided over the bottom surface of each separation groove with an insulating layer being interposed therebetween.

Abstract: A movable body according to an embodiment of the present disclosure includes a vehicle body and an information display apparatus mounted on the vehicle body. The information display apparatus provided at the movable body includes a light projecting part that projects a luminous flux and a reflector that reflects the luminous flux from the light projecting part. The reflector includes a plurality of unit regions two-dimensionally arranged over a main surface. Each of the unit regions includes a plurality of reflecting surfaces two-dimensionally arranged, and splits a luminous flux entering the plurality of reflecting surfaces to perform reflection in a plurality of directions.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part. The semiconductor laser includes an electrode provided over the bottom surface of each separation groove with an insulating layer being interposed therebetween.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: An optical system is provided including a light source configured to emit a light; and a polarizing splitting multiplexing device including a first prism configured to split the light into two polarized light beams having different optical path lengths, and a second prism configured to combine the two polarized light beams. The first prism includes a first reflective surface and a first polarization splitting surface facing the first reflective surface, and the second prism includes a second reflective surface and a second polarization splitting surface facing the second reflective surface.

Abstract: An optical system is provided including a light source configured to emit a light; and a polarizing splitting multiplexing device including a first prism configured to split the light into two polarized light beams having different optical path lengths, and a second prism configured to combine the two polarized light beams. The first prism includes a first reflective surface and a first polarization splitting surface facing the first reflective surface, and the second prism includes a second reflective surface and a second polarization splitting surface facing the second reflective surface.

Abstract: A semiconductor laser positioning member includes: a base section having a through hole into which a semiconductor laser is to be inserted, the semiconductor laser being configured to be disposed in a terminal insertion hole and having a pair of engagement recesses, the terminal insertion hole being formed in a holder; and a pair of plate spring sections projecting from an opening edge of the through hole, the plate spring sections being opposed to each other. The plate spring sections are each formed in a symmetrical shape in a circumferential direction of the through hole, the base section is overlapped with the holder when the semiconductor laser is inserted into the through hole, and the plate spring sections are engaged with the respective engagement recesses, and are each elastically deformable in an optical axis direction of the semiconductor laser when the semiconductor laser is inserted into the through hole.