Patents by Inventor Mikito Ishii

Mikito Ishii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10030576
    Abstract: A bottom surface of a housing recess of a turbine housing includes a close attachment portion in a continuous annular land shape, which is located radially outside a fitting recess. The close attachment portion is closely attached to a portion radially outside first support holes in a surface of a shroud ring opposite from its facing surface, by a fastening force of attachment bolts. The first support holes in the shroud ring communicate with an outlet side of a turbine impeller through a connection path and a cutout.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: July 24, 2018
    Assignee: IHI Corporation
    Inventors: Takafumi Ueda, Akira Iwakami, Yoshinari Yoshida, Naoki Tokue, Masaru Nishioka, Mikito Ishii
  • Patent number: 9988939
    Abstract: A fixed vane-type turbocharger is provided with a fixed vane in a conduit between a bearing housing and a turbine housing. The fixed vane is configured by a movable member disposed on one of the mutually opposing front faces of the bearing housing and the turbine housing so as to be capable of forward and backward movement, and by vanes which are fixed to the front face of the movable member. A pressing member presses the movable member so that the distal ends of the vanes are brought into pressure contact between the rear face of the movable member and either the bearing housing or the turbine housing with the other opposing front face of these. The pressing member contacts the rear face of the movable member within a range in the radial direction where the vanes are disposed, and presses within this range.
    Type: Grant
    Filed: September 12, 2011
    Date of Patent: June 5, 2018
    Assignee: IHI CORPORATION
    Inventor: Mikito Ishii
  • Publication number: 20170292381
    Abstract: Different attack angles including a first attack angle and a second attack angle are set to turbine blades on a first axial side and a second axial side according to respective relative inflow angles of an exhaust gas. In other words, the first attack angle is set on the first axial side according to a relative inflow angle of an exhaust gas blown against the turbine blades through a first scroll passage, and the second attack angle is set on the second axial side according to a relative inflow angle of an exhaust gas blown against the turbine blades through a second scroll passage. An average value of the first attack angle is larger than an average value of the second attack angle.
    Type: Application
    Filed: September 1, 2015
    Publication date: October 12, 2017
    Inventor: Mikito ISHII
  • Publication number: 20150125275
    Abstract: A bottom surface of a housing recess of a turbine housing includes a close attachment portion in a continuous annular land shape, which is located radially outside a fitting recess. The close attachment portion is closely attached to a portion radially outside first support holes in a surface of a shroud ring opposite from its facing surface, by a fastening force of attachment bolts. The first support holes in the shroud ring communicate with an outlet side of a turbine impeller through a connection path and a cutout.
    Type: Application
    Filed: January 16, 2015
    Publication date: May 7, 2015
    Applicant: IHI Corporation
    Inventors: Takafumi UEDA, Akira IWAKAMI, Yoshinari YOSHIDA, Naoki TOKUE, Masaru NISHIOKA, Mikito ISHII
  • Publication number: 20130170975
    Abstract: The present invention relates to a fixed vane-type turbocharger provided with a fixed vane (15) in a conduit (9) between a bearing housing and a turbine housing (4). The fixed vane (15) is configured by a movable member (11) which is disposed on one of the mutually opposing front faces of the bearing housing and the turbine housing (4) so as to be capable of forward and backward movement, and by vanes (14) which are fixed to the front face of the movable member (11). A pressing means (16) is provided which presses the movable member (11) so that the distal ends of the vanes (14) are brought into pressure contact between the rear face of the movable member (11) and either the bearing housing or the turbine housing (4) with the other opposing front face of these. The pressing means (16) contacts the rear face of the movable means (11) within a range in the radial direction where the vanes (14) are disposed, and conducts pressing within this range.
    Type: Application
    Filed: September 12, 2011
    Publication date: July 4, 2013
    Inventor: Mikito Ishii
  • Patent number: 6890839
    Abstract: An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.
    Type: Grant
    Filed: January 15, 2002
    Date of Patent: May 10, 2005
    Assignee: Ishikawajima-Harima Heavy Industries Co., Ltd.
    Inventors: Norihito Kawaguchi, Kenichiro Nishida, Mikito Ishii, Takehito Yagi, Miyuki Masaki, Atsushi Yoshinouchi, Koichiro Tanaka
  • Patent number: 6621636
    Abstract: A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.
    Type: Grant
    Filed: December 21, 2001
    Date of Patent: September 16, 2003
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Ishikawajima-Harima Heavy Industries, Co.
    Inventors: Koichiro Tanaka, Setsuo Nakajima, Takehito Yagi, Mikito Ishii, Kenichiro Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi
  • Publication number: 20030132209
    Abstract: An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample (50) can be achieved because a linear cross-sectional configuration can be created in an optical system (57) with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam (41) from a laser light source at a prescribed angle by means of rotating means (42) even when the beam pattern of the beam (41) from the laser light source has a nonuniform intensity distribution.
    Type: Application
    Filed: October 11, 2002
    Publication date: July 17, 2003
    Inventors: Norihito Kawaguchi, Kenichiro Nishida, Mikito Ishii, Takehito Yagi, Miyuki Masaki, Atsushi Yohsinouchi, Koichiro Tanaka
  • Publication number: 20020080497
    Abstract: A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.
    Type: Application
    Filed: December 21, 2001
    Publication date: June 27, 2002
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koichiro Tanaka, Setsuo Nakajima, Takehito Yagi, Mikito Ishii, Kenichiro Nishida, Norihito Kawaguchi, Miyuki Masaki, Atsushi Yoshinouchi