Abstract: A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.

Abstract: A nozzle head and apparatus for subjecting a surface of a substrate to alternate surface reactions of at least two precursors (A, B) includes an output face, at least one gas supply nozzle, and at least one discharge nozzle. The nozzle head includes on the output face in the following order: a first zone end nozzle, a gas supply nozzle and a second zone end nozzle, repeated one or more times. The first zone end nozzle is arranged at a first distance (LY) from the gas supply nozzle and the second zone end nozzle is arranged at a second distance (LX) from the gas supply nozzle. The second distance (LX) is greater than the first distance (LY).

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus comprises a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: A method and an apparatus for coating a substrate by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor in a reaction chamber. The method includes the steps of arranging the substrate to the substrate support in the reaction zone; supplying a predetermined amount of the first precursor to the reaction chamber for providing a flow of the first precursor to the reaction zone; supplying the second precursor for providing a flow of the second precursor through the reaction zone and discharging the second precursor from the reaction chamber, the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone for forming active precursor radicals from the second precursor supplied into the reaction zone, the active precursor radicals being active to react with the first precursor.

Abstract: A method and an apparatus for coating a substrate by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor in a reaction chamber. The method includes the steps of arranging the substrate to the substrate support in the reaction zone; supplying a predetermined amount of the first precursor to the reaction chamber for providing a flow of the first precursor to the reaction zone; supplying the second precursor for providing a flow of the second precursor through the reaction zone and discharging the second precursor from the reaction chamber, the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone for forming active precursor radicals from the second precursor supplied into the reaction zone, the active precursor radicals being active to react with the first precursor.

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus comprises a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: The invention relates to an apparatus for subjecting a surface of a substrate to surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprises a reaction chamber (1) forming a reaction space (2) for receiving precursor gases reacting on the surface of the substrate. The apparatus further comprises a substrate support (3) for holding the substrate; a dielectric plate (4); and an electrode (7) coupled to a voltage source (8) to induce voltage to the electrode (7) for generating electric discharge to the reaction space (2). The dielectric plate (4) is arranged between the substrate support (3) and the electrode (7) and such that the reaction space (2) is arranged between the substrate support (3) and the dielectric plate (4).

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: The invention relates to an apparatus for processing a surface of a substrate by atomic layer deposition and to a method for operating the apparatus. The apparatus includes a deposition chamber and one or more lead-through connections provided between one or more side chambers and the deposition chamber. The one or more lead through connections includes one or more lead-through chambers and a secondary pressure device operatively connected to the one or more lead-through chambers.

Abstract: The invention relates to a nozzle head, an apparatus and method for subjecting a surface of a substrate to successive surface reactions of at least a first precursor (A) and a second precursor (B). The nozzle head having an output face comprises at least one precursor nozzle for supplying precursor (A, B) to the surface of the substrate and at least one discharge channel for discharging precursor (A, B) from the surface of the substrate. The output face comprises in the following order: a discharge channel, at least one at least one precursor nozzle arranged to supply the first precursor (A) and the second precursor (B) and a discharge channel.

Abstract: The present invention relates to an apparatus, method, a reaction chamber and a use of a reaction chamber for processing a surface of a substrate by subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor. The apparatus includes a vacuum chamber; a detachable reaction chamber arranged to be installed inside the vacuum chamber, and inside which the substrate is positioned during processing and a precursor system for supplying the at least first and second precursors into the action chamber and for discharging the at least first and second precursors from the reaction chamber. According to the present invention the reaction chamber is provided as a gastight vessel.

Abstract: A multilayer coating and a method for fabricating a multilayer coating on a substrate (3). The coating is arranged to minimize diffusion of atoms through the coating, the method comprising the steps of introducing a substrate (3) to a reaction space, depositing a layer of first material (1) on the substrate (3), and depositing a layer of second material (2) on the layer of first material (1). Depositing the layer of first material (1) and the layer of second material (2) comprises alternately introducing precursors into the reaction space and subsequently purging the reaction space after each introduction of a precursor. The first material being selected from the group of titanium oxide and aluminum oxide, the second material being the other from the group of titanium oxide and aluminum oxide. An interfacial region is formed in between titanium oxide and aluminum oxide.a.

Abstract: This invention relates to detecting a pilot tone in an optical fiber. In the method described in the invention, computational complexity is reduced significantly by almost completely removing the need to carry out multipli-cations. To calculate certain spectral components of DFT (Discrete Fourier Transform) only a few multiplications are required. The idea is that for de-tecting one pilot tone, it is adequate to calculate one spectral component of DFT if a specific ratio can be chosen between the pilot tone frequency and the sample rate of the receiver.

Abstract: This invention relates to detecting a pilot tone in an optical fiber. In the method described in the invention, computational complexity is reduced significantly by almost completely removing the need to carry out multipli-cations. To calculate certain spectral components of DFT (Discrete Fourier Transform) only a few multiplications are required. The idea is that for de-tecting one pilot tone, it is adequate to calculate one spectral component of DFT if a specific ratio can be chosen between the pilot tone frequency and the sample rate of the receiver.