Abstract: High aspect ratio metal microstructures may be prepared by a method involving(i) forming a layer of a photoresist on a substrate;(ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist;(iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and(iv) optionally, stripping the photoresist remaining on the surface.Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

Abstract: High aspect ratio metal microstructures may be prepared by a method involving(i) forming a layer of a photoresist on a substrate;(ii) exposing the layer to actinic radiation in an imagewise manner and developing the exposed layer to obtain a surface which contains regions having no remaining photoresist and regions covered with photoresist;(iii) metallizing the surface to form a layer of metal on the region of the surface having no remaining photoresist and on the sides of the regions of photoresist remaining on the surface; and(iv) optionally, stripping the photoresist remaining on the surface.Such microstructures are useful as electron emitters, anisotropic high dielectric interconnects, masks for x-ray photolithography, carriers for the controlled release of active agents, and ultramicroelectrode arrays.

Abstract: A method of fabricating a free-standing wire mesh grid pattern having a sth, flat surface is disclosed. A thermal oxide is selectively applied to front and back sides of a silicon substrate. A central portion of the oxide on the back side is removed. A resist layer is applied onto the oxide on the front side of the substrate. A resist mesh pattern with a border encompassing that resist mesh pattern is lithographically developed on the resist layer. Chrome and gold layers are sequentially deposited onto the border and into the resist mesh pattern to create a wire mesh pattern within the resist mesh pattern. The resist layer, including the developed resist mesh pattern, is removed to expose the wire mesh pattern from the front side of the substrate. A nickel layer is deposited over the gold layer to develop a wider wire mesh pattern. A second gold layer is then deposited over the nickel layer to form a wire mesh grid pattern composed of chrome, gold, nickel and gold layers.