Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: Semiconductor structure and methods of forming the same are provided. An exemplary method includes receiving a workpiece including a magnetic tunneling junction (MTJ) and a conductive capping layer disposed on the MTJ, depositing a first dielectric layer over the workpiece, performing a first planarization process to the first dielectric layer, and after the performing of the first planarization process, patterning the first dielectric layer to form an opening exposing a top surface of the conductive capping layer, selectively removing the conductive capping layer. The method also includes depositing an electrode layer to fill the opening and performing a second planarization process to the workpiece such that a top surface of the electrode layer and a top surface of the first dielectric layer are coplanar.

Abstract: A method includes forming a transistor, which includes forming a dummy gate stack over a semiconductor region, and forming an Inter-Layer Dielectric (ILD). The dummy gate stack is in the ILD, and the ILD covers a source/drain region in the semiconductor region. The method further includes removing the dummy gate stack to form a trench in the first ILD, forming a low-k gate spacer in the trench, forming a replacement gate dielectric extending into the trench, forming a metal layer to fill the trench, and performing a planarization to remove excess portions of the replacement gate dielectric and the metal layer to form a gate dielectric and a metal gate, respectively. A source region and a drain region are then formed on opposite sides of the metal gate.

Abstract: A lamp device includes a light emitting unit and a reflecting unit including first and second reflecting modules. The first reflecting module reflects light towards the second reflecting module and has a reflectivity substantially over 70% for light of wavelength ranging from 550 nm to 800 nm. The second reflecting module reflects light towards the first reflecting module and has a reflectivity that substantially ranges from 50% to 75% for light of wavelength ranging from 460 nm to 700 nm. The light emitting unit emits light toward the reflecting unit such that at least a part of the light emitted by the light emitting unit is reflected from one of the first reflecting module and the second reflecting module.

Abstract: A lamp cover adapted for mounting to a vehicle lamp having an optical axis includes a light-transmissible cover body, an electrically-conductive film being light-transmissible and being formed on the cover body, and an electrode unit being electrically connected to the electrically-conductive film. The electrically-conductive film is adapted for converting electrical energy provided by the electrode unit into thermal energy to heat the cover body.

Abstract: A vehicle light assembly includes a lens unit, a lens cover, a heat dissipation seat, a clamp and a plurality of fasteners. The lens cover is connected to the lens unit. The heat dissipation seat is disposed rearward of the lens unit and the lens cover. The clamp is connected to a front side of the heat dissipation seat and defines a clamping space receiving the lens unit and the lens cover. The clamp clamps tightly the lens cover against the lens unit. The fasteners are threaded forwardly into the lens cover from a rear side of the dissipation seat.

Abstract: A vehicle light assembly includes a lens unit, a lens cover, a heat dissipation seat, a clamp and a plurality of fasteners. The lens cover is connected to the lens unit. The heat dissipation seat is disposed rearward of the lens unit and the lens cover. The clamp is connected to a front side of the heat dissipation seat and defines a clamping space receiving the lens unit and the lens cover. The clamp clamps tightly the lens cover against the lens unit. The fasteners are threaded forwardly into the lens cover from a rear side of the dissipation seat.

Abstract: A headlight includes a main reflective member having an oval reflective surface which has a first focal point and a second focal point. A light source is located at the first focal point of the main reflective member. At least one additional reflector is located on one side of the main reflective member, wherein the light source is located between the main reflective member and the additional reflector. The at least one additional reflector has a curved reflective surface which has a third focal point located close to the first focal point. The light beams generated from the light source are reflected by the at least one additional reflector and pass through the third focal point and the main reflective member and move forward. The tracks of the light beams are close to that of light beams that are directly reflected by the main reflective member.

Abstract: An LED lamp assembly includes a base, a circuit board, an LED lamp, a cable, and a cable organization device. The base includes a base body, and a fixed post disposed on the base body. The circuit board is disposed on the base body. The fixed post extends upwardly from the base body. The cable organization device includes a mounting unit connected to the circuit board, and an organization unit connected to the mounting unit. The organization unit includes at least one organization structure, and a retaining groove permitting the fixed post to be inserted thereinto. The organization structure includes a base wall, and first and second clamping walls connected respectively to two opposite ends of the base wall to define a cable clamping groove.

Abstract: A light unit includes a light guiding body having a light entrance face. A base has a curved oval surface defined therein which has a first focus and a second focus. A light emitting unit is located at the first focus and generates light beams which pass through the second focus and enter into the light guiding body via the light entrance face. The base has a heat dissipating unit connected to outside thereof. The light beams generated from the light emitting unit are completely guided into the light guiding body to have high illumination efficiency. The heat dissipating unit brings the heat away from the light unit.

Abstract: A light unit includes a light guiding body having a light entrance face. A base has a curved oval surface defined therein which has a first focus and a second focus. A light emitting unit is located at the first focus and generates light beams which pass through the second focus and enter into the light guiding body via the light entrance face. The base has a heat dissipating unit connected to outside thereof. The light beams generated from the light emitting unit are completely guided into the light guiding body to have high illumination efficiency. The heat dissipating unit brings the heat away from the light unit.